型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FF900R12IE4V | INFINEON |
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暂无描述 | |
FF900R12IE4VP | INFINEON |
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TIM | |
FF900R12IE4VPBOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-10 | |
FF900R12IP4 | INFINEON |
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PrimePACK2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC | |
FF900R12IP4BOSA2 | INFINEON |
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Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-11 | |
FF900R12IP4D | INFINEON |
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PrimePACK?2 Modul mit Trench/Feldstopp IGBT4, gr??erer Emitter Controlled 4 Diode und NTC | |
FF900R12IP4DBOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-11 | |
FF900R12IP4DBOSA2 | INFINEON |
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Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-11 | |
FF900R12IP4DV | INFINEON |
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Insulated Gate Bipolar Transistor | |
FF900R12IP4P | INFINEON |
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Insulated Gate Bipolar Transistor, |