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FF75R12YT3BOMA1 PDF预览

FF75R12YT3BOMA1

更新时间: 2024-11-07 21:12:23
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网功率控制晶体管
页数 文件大小 规格书
8页 451K
描述
Insulated Gate Bipolar Transistor, MODULE-24

FF75R12YT3BOMA1 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X9针数:24
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:8.39
外壳连接:ISOLATED最大集电极电流 (IC):100 A
集电极-发射极最大电压:1200 V配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 代码:R-XUFM-X9元件数量:2
端子数量:9最高工作温度:125 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):710 ns标称接通时间 (ton):108 ns
Base Number Matches:1

FF75R12YT3BOMA1 数据手册

 浏览型号FF75R12YT3BOMA1的Datasheet PDF文件第2页浏览型号FF75R12YT3BOMA1的Datasheet PDF文件第3页浏览型号FF75R12YT3BOMA1的Datasheet PDF文件第4页浏览型号FF75R12YT3BOMA1的Datasheet PDF文件第5页浏览型号FF75R12YT3BOMA1的Datasheet PDF文件第6页浏览型号FF75R12YT3BOMA1的Datasheet PDF文件第7页 
TechnischeꢀInformationꢀ/ꢀTechnicalꢀInformation  
IGBT-Module  
IGBT-modules  
FF75R12YT3  
VorläufigeꢀDaten  
PreliminaryꢀData  
IGBT,Wechselrichterꢀ/ꢀIGBT,Inverter  
HöchstzulässigeꢀWerteꢀ/ꢀMaximumꢀRatedꢀValues  
Kollektor-Emitter-Sperrspannung  
Collector-emitterꢀvoltage  
Tvj = 25°C  
VCES  
1200  
V
Kollektor-Dauergleichstrom  
ContinuousꢀDCꢀcollectorꢀcurrent  
TC = 80°C, Tvj max = 150°C  
TC = 25°C, Tvj max = 150°C  
IC nom  
IC  
75  
100  
A
A
PeriodischerꢀKollektor-Spitzenstrom  
Repetitiveꢀpeakꢀcollectorꢀcurrent  
tP = 1 ms  
ICRM  
Ptot  
150  
345  
A
Gesamt-Verlustleistung  
Totalꢀpowerꢀdissipation  
TC = 25°C, Tvj max = 150  
W  
Gate-Emitter-Spitzenspannung  
Gate-emitterꢀpeakꢀvoltage  
VGES  
+/-20  
V
CharakteristischeꢀWerteꢀ/ꢀCharacteristicꢀValues  
min. typ. max.  
Kollektor-Emitter-Sättigungsspannung  
Collector-emitterꢀsaturationꢀvoltage  
IC = 75 A, VGE = 15 V  
IC = 75 A, VGE = 15 V  
Tvj = 25°C  
Tvj = 125°C  
1,80 2,30  
2,05  
V
V
VCE sat  
VGEth  
QG  
Gate-Schwellenspannung  
Gateꢀthresholdꢀvoltage  
IC = 3,00 mA, VCE = VGE, Tvj = 25°C  
VGE = -15 V ... +15 V  
5,0  
5,8  
0,68  
3,0  
5,00  
0,18  
6,5  
V
µC  
Gateladung  
Gateꢀcharge  
InternerꢀGatewiderstand  
Internalꢀgateꢀresistor  
Tvj = 25°C  
RGint  
Cies  
Eingangskapazität  
Inputꢀcapacitance  
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V  
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V  
VCE = 1200 V, VGE = 0 V, Tvj = 25°C  
VCE = 0 V, VGE = 20 V, Tvj = 25°C  
nF  
nF  
Rückwirkungskapazität  
Reverseꢀtransferꢀcapacitance  
Cres  
ICES  
IGES  
td on  
Kollektor-Emitter-Reststrom  
Collector-emitterꢀcut-offꢀcurrent  
1,0 mA  
Gate-Emitter-Reststrom  
Gate-emitterꢀleakageꢀcurrent  
400 nA  
µs  
Einschaltverzögerungszeit,ꢀinduktiveꢀLast  
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload  
IC = 75 A, VCE = 600 V  
VGE = ±15 V  
RGon = 11 Ω  
Tvj = 25°C  
Tvj = 125°C  
0,073  
0,075  
µs  
Anstiegszeit,ꢀinduktiveꢀLast  
Riseꢀtime,ꢀinductiveꢀload  
IC = 75 A, VCE = 600 V  
VGE = ±15 V  
RGon = 11 Ω  
Tvj = 25°C  
Tvj = 125°C  
0,024  
0,033  
µs  
µs  
tr  
td off  
tf  
Abschaltverzögerungszeit,ꢀinduktiveꢀLast  
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload  
IC = 75 A, VCE = 600 V  
VGE = ±15 V  
RGoff = 11 Ω  
Tvj = 25°C  
Tvj = 125°C  
0,44  
0,53  
µs  
µs  
Fallzeit,ꢀinduktiveꢀLast  
Fallꢀtime,ꢀinductiveꢀload  
IC = 75 A, VCE = 600 V  
VGE = ±15 V  
RGoff = 11 Ω  
Tvj = 25°C  
Tvj = 125°C  
0,105  
0,18  
µs  
µs  
EinschaltverlustenergieꢀproꢀPuls  
Turn-onꢀenergyꢀlossꢀperꢀpulse  
IC = 75 A, VCE = 600 V, LS = 40 nH  
VGE = ±15 V  
RGon = 11 Ω  
Tvj = 25°C  
Tvj = 125°C  
5,20  
7,10  
mJ  
mJ  
Eon  
Eoff  
AbschaltverlustenergieꢀproꢀPuls  
Turn-offꢀenergyꢀlossꢀperꢀpulse  
IC = 75 A, VCE = 600 V, LS = 40 nH  
VGE = ±15 V  
RGoff = 11 Ω  
Tvj = 25°C  
Tvj = 125°C  
5,50  
8,60  
mJ  
mJ  
Kurzschlußverhalten  
SCꢀdata  
VGE 15 V, VCC = 900 V  
VCEmax = VCES -LsCE ·di/dt  
ISC  
tP 10 µs, Tvj = 125°C  
300  
A
Wärmewiderstand,ꢀChipꢀbisꢀGehäuse  
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase  
proꢀIGBTꢀ/ꢀperꢀIGBT  
RthJC  
RthCH  
Tvj op  
0,33 0,36 K/W  
Wärmewiderstand,ꢀGehäuseꢀbisꢀKühlkörper proꢀIGBTꢀ/ꢀperꢀIGBT  
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink  
0,20  
K/W  
°C  
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)  
TemperaturꢀimꢀSchaltbetrieb  
Temperatureꢀunderꢀswitchingꢀconditions  
-40  
125  
preparedꢀby:ꢀAC  
approvedꢀby:ꢀMB  
dateꢀofꢀpublication:ꢀ2013-10-03  
revision:ꢀ2.0  
1

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