Datasheet > FDMA1028NZ-F021

FDMA1028NZ-F021

更新时间： 2023-09-03 20:35:54

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	187K
描述
双 N 沟道 PowerTrench® MOSFET 20V，3.7A，68mΩ

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FDMA1028NZ-F021 数据手册

FDMA1028NZ

TYPICAL CHARACTERISTICS (continued)

500

f = 1 MHz

= 0 V

= 3.7 A

= 5 V

15 V

400

300

200

100

10 V

iss

oss

rss

Q , Gate Charge (nC)

, Drain to Source Voltage (V)

Figure 8. Capacitance Characteristics

Figure 7. Gate Charge Characteristics

100

SINGLE PULSE

= 173°C/W

ꢁ

T = 25°C

DS(ON) LIMIT

100 ꢂ s

1 ms

10 ms

100 ms

= 4.5 V

0.1

1 s

10 s

SINGLE PULSE

= 173°C/W

ꢁ

T = 25°C

0.01

0.1

100

0.0001 0.001 0.01

0.1

100 1000

, Drain−Source Voltage (V)

t , Time (s)

Figure 9. Maximum Safe Operating Area

Figure 10. Single Pulse Maximum Power

Dissipation

D = 0.5

0.2

(t) = r(t) × R

= 173°C/W

ꢁ

0.1

P(pk)

0.05

0.02

0.01

T − T = P × R (t)

ꢁ

SINGLE PULSE

Duty Cycle, D = t / t

0.01

0.0001

0.001

0.01

0.1

100

1000

t, Time (s)

Figure 11. Transient Thermal Response Curve

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United

States and/or other countries.

MicroFET is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other

countries.

www.onsemi.com

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