Datasheet > FDG6301N_09

FDG6301N_09

更新时间： 2024-09-16 12:23:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	351K
描述
Dual N-Channel, Digital FET

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FDG6301N_09 数据手册

March 2009

FDG6301N_F085

Dual N-Channel, Digital FET

General Description

Features

25 V, 0.22 A continuous, 0.65 A peak.

These dual N-Channel logic level enhancement mode

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process is especially tailored to

minimize on-state resistance. This device has been

designed especially for low voltage applications as a

replacement for bipolar digital transistors and small

R_DS(ON)= 4 W @ V_GS= 4.5 V,

R_DS(ON)= 5 W @ V_GS= 2.7 V.

Very low level gate drive requirements allowing direct

operation in 3 V circuits (V_GS(th)< 1.5 V).

Gate-Source Zener for ESD ruggedness

(>6kV Human Body Model).

signal MOSFETs.

Compact industry standard SC70-6 surface mount

package.

Qualified to AEC Q101

RoHS Compliant

SuperSOT^TM-8

SO-8

SOT-23

SuperSOT^TM-6

SC70-6

SOT-223

1 or 4 *

6 or 3

2 or 5

3 or 6

5 or 2

4 or 1 *

SC70-6

*The pinouts are symmetrical; pin 1 and 4 are interchangeable.

Units inside the carrier can be of either orientation and will not affect the functionality of the device.

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DSS

V_GSS

I_D

Parameter

FDG6301N_F085

Units

Drain-Source Voltage

Gate-Source Voltage

Drain/Output Current

- Continuous

- Pulsed

0.22

0.65

0.3

P_D

Maximum Power Dissipation

(Note 1)

°C

T_J,T_STG

ESD

Operating and Storage Temperature Range

-55 to 150

6.0

Electrostatic Discharge Rating MIL-STD-883D

Human Body Model(100 pF / 1500 W)

THERMAL CHARACTERISTICS

R_qJA

Thermal Resistance, Junction-to-Ambient

415

°C/W

FDG6301N_F085 Rev. A

www.fairchildsemi.com

12 3 4 5

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