FDG6308

更新时间： 2024-09-15 22:31:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	87K
描述
P-Channel 1.8V Specified PowerTrench MOSFET

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数据手册

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FDG6308 数据手册

October 2000

PRELIMINARY

FDG6308P

P-Channel 1.8V Specified PowerTrench MOSFET

General Description

Features

This P-Channel 1.8V specified MOSFET uses

Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management

applications.

• –0.6 A, –20 V.

R_DS(ON)= 0.40 Ω @ V_GS= –4.5 V

R_DS(ON)= 0.55 Ω @ V_GS= –2.5 V

_DS(ON)= 0.80 Ω @ V_GS= –1.8 V

• Low gate charge

Applications

• High performance trench technology for extremely

• Battery management

• Load switch

low R_DS(ON)

• Compact industry standard SC70-6 surface mount

package

1 or 4

2 or 5

3 or 6

6 or 3

5 or 2

4 or 1

Pin 1

SC70-6

The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

–20

Units

V_GSS

Gate-Source Voltage

± 8

I_D

Drain Current – Continuous

– Pulsed

(Note 1)

–0.6

–1.8

P_D

Power Dissipation for Single Operation

0.3

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1)

415

R_θJA

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.08

FDG6308P

7’’

8mm

3000 units

FDG6308P Rev B(W)

2000 Fairchild Semiconductor Corporation

12 3 4 5

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与FDG6308相关器件

型号	品牌	获取价格	描述	数据表
FDG6308P	FAIRCHILD	获取价格	P-Channel 1.8V Specified PowerTrench MOSFET
FDG6308P	ONSEMI	获取价格	双 P 沟道，1.8V，指定 PowerTrench® MOSFET，-20 V，-0.6
FDG6308P_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.6A I(D), 20V, 2-Element, P-Channel, Silicon, Metal
FDG6308PD87Z	ONSEMI	获取价格	Small Signal Field-Effect Transistor, 0.6A I(D), 20V, 2-Element, P-Channel, Silicon, Metal
FDG6308P-G	FAIRCHILD	获取价格	Transistor
FDG6313N	FAIRCHILD	获取价格	Dual N-Channel, Digital FET
FDG6313N_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal
FDG6316	FAIRCHILD	获取价格	P-Channel 1.8V Specified PowerTrench MOSFET
FDG6316P	FAIRCHILD	获取价格	P-Channel 1.8V Specified PowerTrench MOSFET
FDG6316P	ONSEMI	获取价格	P 沟道 1.8V 指定 PowerTrench® MOSFET -12V，-0.7A，2