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FDG6322C PDF预览

FDG6322C

更新时间: 2024-09-17 11:15:23
品牌 Logo 应用领域
安森美 - ONSEMI PC开关光电二极管晶体管
页数 文件大小 规格书
10页 302K
描述
双 N 和 P 沟道数字 FET 25V

FDG6322C 技术参数

是否无铅:不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:10 weeks风险等级:0.95
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:5434Samacsys Pin Count:6
Samacsys Part Category:Integrated CircuitSamacsys Package Category:SOT23 (6-Pin)
Samacsys Footprint Name:FDG6322CSamacsys Released Date:2015-04-16 09:48:08
Is Samacsys:N其他特性:LOGIC LEVEL COMPATIBLE
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:25 V
最大漏极电流 (Abs) (ID):0.22 A最大漏极电流 (ID):0.22 A
最大漏源导通电阻:4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs):300 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDG6322C 数据手册

 浏览型号FDG6322C的Datasheet PDF文件第2页浏览型号FDG6322C的Datasheet PDF文件第3页浏览型号FDG6322C的Datasheet PDF文件第4页浏览型号FDG6322C的Datasheet PDF文件第5页浏览型号FDG6322C的Datasheet PDF文件第6页浏览型号FDG6322C的Datasheet PDF文件第7页 
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FDG6322C 替代型号

型号 品牌 替代类型 描述 数据表
FDG6320C ONSEMI

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双 N 和 P 沟道 数字 FET,25V

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