FDG6335N

更新时间： 2024-09-15 22:32:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	67K
描述
20V N & P-Channel PowerTrench MOSFETs

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数据手册
替代型号

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FDG6335N 数据手册

October 2001

FDG6335N

20V N-Channel PowerTrench^ÒMOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized use

in small switching regulators, providing an extremely

low R_DS(ON)and gate charge (Q_G) in a small package.

0.7 A, 20 V.

R_DS(ON)= 300 mW @ V_GS= 4.5 V

_DS(ON)= 400 mW @ V_GS= 2.5 V

Low gate charge (1.1 nC typical)

High performance trench technology for extremely

low R_DS(ON)

Applications

Compact industry standard SC70-6 surface mount

package

DC/DC converter

Power management

Loadswitch

1 or 4

2 or 5

3 or 6

6 or 3

5 or 2

4 or 1

Pin 1

SC70-6

Dual N-Channel

The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

± 12

I_D

Drain Current – Continuous

– Pulsed

(Note 1)

0.7

2.1

P_D

Power Dissipation for Single Operation

0.3

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

R_qJA

Thermal Resistance, Junction-to-Ambient

(Note 1)

415

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.35

FDG6335N

7’’

8mm

3000 units

FDG6335N Rev C (W)

Ó2001 Fairchild Semiconductor Corporation

12 3 4 5

中文翻译

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FDG6335N 替代型号

型号	品牌	替代类型	描述	数据表
FDG6301N	FAIRCHILD	类似代替	Dual N-Channel, Digital FET
FDG6301N	ONSEMI	功能相似	双 N 沟道数字 FET 25V，0.22A，4Ω
SI1902DL-T1-E3	VISHAY	功能相似	Dual N-Channel 20-V (D-S) MOSFET

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FDG8850NZ	FAIRCHILD	获取价格	Dual N-Channel PowerTrench㈢ MOSFET
FDG8850NZ	ONSEMI	获取价格	双 N 沟道 PowerTrench® MOSFET 30 V，0.75A，0.4 mΩ
FDG8850NZ-G	FAIRCHILD	获取价格	暂无描述
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