生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.36 | 其他特性: | LOGIC LEVEL COMPATIBLE |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 25 V |
最大漏极电流 (ID): | 0.41 A | 最大漏源导通电阻: | 1.1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
元件数量: | 2 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDG6306P | FAIRCHILD |
获取价格 |
P-Channel 2.5V Specified PowerTrench MOSFET | |
FDG6306P | ONSEMI |
获取价格 |
P 沟道,2.5V,指定 PowerTrench® MOSFET,-20 V,-0.6 A | |
FDG6306P_NL | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 0.6A I(D), 20V, 2-Element, P-Channel, Silicon, Metal | |
FDG6308 | FAIRCHILD |
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P-Channel 1.8V Specified PowerTrench MOSFET | |
FDG6308P | FAIRCHILD |
获取价格 |
P-Channel 1.8V Specified PowerTrench MOSFET | |
FDG6308P | ONSEMI |
获取价格 |
双 P 沟道,1.8V,指定 PowerTrench® MOSFET,-20 V,-0.6 | |
FDG6308P_NL | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 0.6A I(D), 20V, 2-Element, P-Channel, Silicon, Metal | |
FDG6308PD87Z | ONSEMI |
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Small Signal Field-Effect Transistor, 0.6A I(D), 20V, 2-Element, P-Channel, Silicon, Metal | |
FDG6308P-G | FAIRCHILD |
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Transistor | |
FDG6313N | FAIRCHILD |
获取价格 |
Dual N-Channel, Digital FET |