Datasheet > FDG6301N-F085

FDG6301N-F085

更新时间： 2024-09-17 11:14:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	637K
描述
双 N 沟道，数字 FET，25V，0.22A，4Ω

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中文翻译

获取价格

数据手册

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FDG6301N-F085 数据手册

Dual N-Channel, Digital FET

FDG6301N-F085

Features

• 25 V, 0.22 A Continuous, 0.65 A Peak

• R

= 4 Ω @ V = 4.5 V,

DS(ON)

= 5 Ω @ V = 2.7 V.

DS(ON)

www.onsemi.com

• Very Low Level Gate Drive Requirements allowing Directop−

Eration in 3 V Circuits (V

< 1.5 V)

GS(th)

• Gate−Source Zener for ESD Ruggedness ( >6 kV Human Body

Model)

• Compact Industry Standard SC70−6 Surface Mount Package.

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

SC−88 (SC−70 6 Lead), 1.25x2

CASE 419AD

• Low Voltage Applications as a Replacement for Bipolar Digital

Transistors and Small Signal MOSFETs

MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Symbol

VDSS

VGS

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current Continuous

Pulsed

Ratings

Units

0.22

0.65

0.3

Power Dissipation

TJ, TSTG Operating and Storage Temperature

−55 to 150

6.0

°C

ESD

Electrostatic Discharge Rating

MIL−STD−883D Human Body Model

(100 pF / 1500 W)

Thermal Resistance, Junction to Ambient

415

°C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. R

is the sum of the junction−to−case and case−to−ambient thermal

resistance, where the case thermal reference is defined as the Solder

mounting surface of the drain pins. R is guaranteed by design, while R

is determined by the board design. R

mounting on FR−4 board in still air.

= 415 °C/W on minimum pad

2. A suffix as “...F085P” has been temporarily introduced in order to manage a

double source strategy as ON Semiconductor has officially announced in

August 2014.

3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

ORDERING INFORMATION

†

Device

Device Marking

Package

Shipping

FDG6301N−F085

FDG6301N

SC−88 (SC−70 6 Lead)

(Pb−Free, Halogen Free)

3,000 units / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D

Publication Order Number:

September, 2019 − Rev. 3

FDG6301N−F085/D

12 3 4 5 6

中文翻译

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与FDG6301N-F085相关器件

型号	品牌	获取价格	描述	数据表
FDG6301N-F085P	ONSEMI	获取价格	双 N 沟道，数字 FET，25V，0.22A，4Ω
FDG6301NL99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel, Silicon, Meta
FDG6302	FAIRCHILD	获取价格	Dual P-Channel, Digital FET
FDG6302P	FAIRCHILD	获取价格	Dual P-Channel, Digital FET
FDG6302P_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.14A I(D), 25V, 2-Element, P-Channel, Silicon, Meta
FDG6302PD87Z	ETC	获取价格	TRANSISTOR \| MOSFET \| MATCHED PAIR \| P-CHANNEL \| 25V V(BR)DSS \| TSOP
FDG6303	FAIRCHILD	获取价格	Dual N-Channel, Digital FET
FDG6303N	FAIRCHILD	获取价格	Dual N-Channel, Digital FET
FDG6303N	ONSEMI	获取价格	双N沟道数字FET
FDG6303N_01	FAIRCHILD	获取价格	Dual N-Channel, Digital FET

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