Datasheet > FDD86567-F085

FDD86567-F085

更新时间： 2023-09-03 20:39:14

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	547K
描述
60 V、100 A、2.6 mΩ、DPAKN 沟道 PowerTrench®

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数据手册

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FDD86567-F085 数据手册

Typical Characteristics

2.4

2.0

1.6

1.2

0.8

0.4

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

I_D= 80A

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

T_J= 25^oC

T_J= 175^oC

I_D= 80A

V_GS= 10V

-80

-40

120

160

200

T_J, JUNCTION TEMPERATURE(^oC)

V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 11. R_DSONvs. Gate Voltage

Figure 12. Normalized R_DSONvs. Junction

Temperature

1.5

1.10

V_GS= V_DS

I_D= 5mA

= 250μA

1.2

0.9

0.6

0.3

0.0

1.05

1.00

0.95

0.90

-80

-40

120

160

200

-80

-40

120

160

200

T_J, JUNCTION TEMPERATURE (^oC)

T_J, JUNCTION TEMPERATURE(^oC)

Figure 13. Normalized Gate Threshold Voltage vs.

Temperature

Figure 14. Normalized Drain to Source

Breakdown Voltage vs. Junction Temperature

10000

ID = 80A

V_DD= 30V

C_iss

V_DD=24V

V_DD= 36V

1000

C_oss

100

C_rss

f = 1MHz

V_GS= 0V

0.1

100

Q_g, GATE CHARGE(nC)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 15. Capacitance vs. Drain to Source

Voltage

Figure 16. Gate Charge vs. Gate to Source

Voltage

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