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FDD86567-F085 PDF预览

FDD86567-F085

更新时间: 2024-10-29 11:15:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 547K
描述
60 V、100 A、2.6 mΩ、DPAKN 沟道 PowerTrench®

FDD86567-F085 数据手册

 浏览型号FDD86567-F085的Datasheet PDF文件第1页浏览型号FDD86567-F085的Datasheet PDF文件第2页浏览型号FDD86567-F085的Datasheet PDF文件第3页浏览型号FDD86567-F085的Datasheet PDF文件第4页浏览型号FDD86567-F085的Datasheet PDF文件第5页浏览型号FDD86567-F085的Datasheet PDF文件第7页 
Typical Characteristics  
50  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
PULSE DURATION = 80μs  
DUTY CYCLE = 0.5% MAX  
ID = 80A  
PULSE DURATION = 80μs  
DUTY CYCLE = 0.5% MAX  
40  
30  
20  
10  
0
TJ = 25oC  
TJ = 175oC  
ID = 80A  
VGS = 10V  
2
4
6
8
10  
-80  
-40  
0
40  
80  
120  
160  
200  
TJ, JUNCTION TEMPERATURE(oC)  
VGS, GATE TO SOURCE VOLTAGE (V)  
Figure 11. RDSON vs. Gate Voltage  
Figure 12. Normalized RDSON vs. Junction  
Temperature  
1.5  
1.10  
VGS = VDS  
ID = 5mA  
I
D
= 250μA  
1.2  
0.9  
0.6  
0.3  
0.0  
1.05  
1.00  
0.95  
0.90  
-80  
-40  
0
40  
80  
120  
160  
200  
-80  
-40  
0
40  
80  
120  
160  
200  
TJ, JUNCTION TEMPERATURE (oC)  
TJ, JUNCTION TEMPERATURE(oC)  
Figure 13. Normalized Gate Threshold Voltage vs.  
Temperature  
Figure 14. Normalized Drain to Source  
Breakdown Voltage vs. Junction Temperature  
10000  
10  
ID = 80A  
VDD = 30V  
Ciss  
8
VDD =24V  
VDD = 36V  
1000  
6
4
2
0
Coss  
100  
Crss  
f = 1MHz  
VGS = 0V  
10  
0.1  
1
10  
100  
0
20  
40  
60  
80  
Qg, GATE CHARGE(nC)  
VDS, DRAIN TO SOURCE VOLTAGE (V)  
Figure 15. Capacitance vs. Drain to Source  
Voltage  
Figure 16. Gate Charge vs. Gate to Source  
Voltage  
www.onsemi.com  
5

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