Datasheet > FDD86567-F085

FDD86567-F085

更新时间： 2023-09-03 20:39:14

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	547K
描述
60 V、100 A、2.6 mΩ、DPAKN 沟道 PowerTrench®

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FDD86567-F085 数据手册

Electrical Characteristics T_J= 25°C unless otherwise noted.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Off Characteristics

B_VDSS

I_DSS

Drain-to-Source Breakdown Voltage

Drain-to-Source Leakage Current

Gate-to-Source Leakage Current

I_D= 250μA, V_GS= 0V

_DS= 6 0 V , T _J= 25^oC

μA

V_GS= 0V

T_J= 175^oC (Note 4)

I_GSS

V_GS= ±20V

±100

On Characteristics

V_GS(th)

R_DS(on)

Gate to Source Threshold Voltage

Drain to Source On Resistance

V_GS= V_DS, I_D= 250μA

2.9

2.6

4.9

T_J= 25^oC

3.2

6.0

mΩ

I_D= 80A,

T_J= 175^oC (Note 4)

_GS= 10V

Dynamic Characteristics

C_iss

Input Capacitance

4950

1300

_DS= 30V, V_GS= 0V,

C_oss

C_rss

R_g

Output Capacitance

f = 1MHz

Reverse Transfer Capacitance

Gate Resistance

V_GS= 0.5V, f = 1MHz

V_GS= 0 to 10V

2.3

Q_g(ToT)

Q_g(th)

Q_gs

Total Gate Charge

V_DD= 48V

I_D= 80A

Threshold Gate Charge

Gate-to-Source Gate Charge

Gate-to-Drain “Miller“ Charge

V_GS= 0 to 2V

9.1

Q_gd

Switching Characteristics

t_on

t_d(on)

t_r

Turn-On Time

Turn-On Delay

Rise Time

105

_DD= 30V, I_D= 80A,

V_GS= 10V, R_GEN= 6Ω

t_d(off)

t_f

Turn-Off Delay

Fall Time

t_off

Turn-Off Time

Drain-Source Diode Characteristics

_SD= 80A, V_GS= 0V

I_SD= 40A, V_GS= 0V

_DD= 48V, I_F= 80A,

dI_SD/dt = 100A/μs

1.25

1.2

V_SD

Source-to-Drain Diode Voltage

t_rr

Reverse-Recovery Time

Q_rr

Reverse-Recovery Charge

114

Note:

4: The maximum value is specified by design at T = 175°C. Product is not tested to this condition in production.

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