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FDC5612-F095 PDF预览

FDC5612-F095

更新时间: 2024-01-02 14:07:32
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 78K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

FDC5612-F095 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
配置:Single最大漏极电流 (Abs) (ID):4.3 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.6 W子类别:FET General Purpose Power
表面贴装:YESBase Number Matches:1

FDC5612-F095 数据手册

 浏览型号FDC5612-F095的Datasheet PDF文件第2页浏览型号FDC5612-F095的Datasheet PDF文件第3页浏览型号FDC5612-F095的Datasheet PDF文件第4页浏览型号FDC5612-F095的Datasheet PDF文件第5页 
December 2004  
FDC5612  
60V N-Channel PowerTrench® MOSFET  
General Description  
Features  
This N-Channel MOSFET has been designed  
specifically to improve the overall efficiency of DC/DC  
converters using either synchronous or conventional  
switching PWM controllers.  
4.3 A, 60 V. RDS(ON) = 0.055 W @ VGS = 10 V  
RDS(ON) = 0.064 W @ VGS = 6 V  
Low gate charge (12.5nC typical).  
These MOSFETs feature faster switching and lower gate  
charge than other MOSFETs with comparable RDS(ON)  
specifications.  
Fast switching speed.  
High performance trench technology for extremely  
The result is a MOSFET that is easy and safer to drive  
(even at very high frequencies), and DC/DC power supply  
low RDS(ON)  
.
designs with higher overall efficiency.  
SuperSOTTM-6 package: small footprint (72% smaller  
than standard SO-8); low profile (1mm thick).  
S
1
6
5
4
D
D
2
3
G
D
D
SuperSOTTM-6  
TA = 25°C unless otherwise noted  
Absolute Maximum Ratings  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
60  
V
V
A
20  
Gate-Source Voltage  
±
(Note 1a)  
(Note 1a)  
Drain Current - Continuous  
Drain Current - Pulsed  
4.3  
20  
PD  
Power Dissipation for Single Operation  
1.6  
W
(Note 1b)  
0.8  
C
TJ, Tstg  
Operating and Storage Junction Temperature Range  
-55 to +150  
°
Thermal Characteristics  
θ
(Note 1a)  
(Note 1)  
R
C/W  
Thermal Resistance, Junction-to-Ambient  
78  
30  
JA  
°
R
C/W  
Thermal Resistance, Junction-to-Case  
JC  
°
θ
Package Outlines and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape Width  
Quantity  
.562  
FDC5612  
7’’  
8mm  
3000 units  
©2004 Fairchild Semiconductor Corporation  
FDC5612 Rev. C2  

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