生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.74 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 3 A |
最大漏极电流 (ID): | 3 A | 最大漏源导通电阻: | 0.1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
元件数量: | 1 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 1.6 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDC5614PS62Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-o |
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FDC5614PT/R_NL | FAIRCHILD |
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Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-o |
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FDC5661N | ONSEMI |
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MOSFET - N-Channel Logic Level, PowerTrench® |
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FDC5661N | FAIRCHILD |
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N-Channel Logic Level PowerTrench? MOSFET 60V |
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FDC5661N-F085 | ONSEMI |
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N 沟道,PowerTrench® MOSFET, 逻辑电平,60V,4A,60mΩ |
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FDC60 | ASTRODYNE |
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Isolated and Regulated 60 WATT Modular DC/DC Converters |
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FDC6000NZ | FAIRCHILD |
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Dual N-Channel 2.5V Specified PowerTrench MOSFET |
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FDC60-12D05 | ASTRODYNE |
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Isolated and Regulated 60 WATT Modular DC/DC Converters |
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FDC60-12D12 | ASTRODYNE |
获取价格 |
Isolated and Regulated 60 WATT Modular DC/DC Converters |
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FDC60-12D15 | ETC |
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60 WATTS OUTPUT POWER |
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