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FDC5614P PDF预览

FDC5614P

更新时间: 2024-01-12 20:53:29
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
5页 141K
描述
60V P-Channel Logic Level PowerTrench MOSFET

FDC5614P 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:SSOT
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.31
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:1062032Samacsys Pin Count:6
Samacsys Part Category:Transistor BJT PNPSamacsys Package Category:SOT23 (6-Pin)
Samacsys Footprint Name:SuperSOT-6Samacsys Released Date:2019-09-17 10:44:10
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):3 A
最大漏极电流 (ID):3 A最大漏源导通电阻:0.105 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.6 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDC5614P 数据手册

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February 2002  
FDC5614P  
60V P-Channel Logic Level PowerTrenchMOSFET  
General Description  
Features  
This 60V P-Channel MOSFET uses Fairchild’s high  
voltage PowerTrench process. It has been optimized for  
power management applications.  
–3 A, –60 V.  
RDS(ON) = 0.105 @ VGS = –10 V  
RDS(ON) = 0.135 @ VGS = –4.5 V  
Fast switching speed  
Applications  
High performance trench technology for extremely  
low RDS(ON)  
DC-DC converters  
Load switch  
Power management  
S
D
D
1
2
3
6
5
4
G
D
SuperSOT TM-6  
D
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
–60  
V
VGSS  
ID  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
V
A
20  
–3  
–20  
(Note 1a)  
PD  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
1.6  
0.8  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
78  
30  
RθJA  
RθJC  
°C/W  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
.564  
FDC5614P  
7’’  
8mm  
3000 units  
FDC5614P Rev C1 (W)  
2002 Fairchild Semiconductor Corporation  

FDC5614P 替代型号

型号 品牌 替代类型 描述 数据表
FDC5614P_NL FAIRCHILD

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