生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 3 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 1.6 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDC5614P_NL | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-o |
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FDC5614PD84Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-o |
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FDC5614PD87Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-o |
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FDC5614PS62Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-o |
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FDC5614PT/R_NL | FAIRCHILD |
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Small Signal Field-Effect Transistor, 3A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-o |
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FDC5661N | ONSEMI |
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MOSFET - N-Channel Logic Level, PowerTrench® |
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FDC5661N | FAIRCHILD |
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N-Channel Logic Level PowerTrench? MOSFET 60V |
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FDC5661N-F085 | ONSEMI |
获取价格 |
N 沟道,PowerTrench® MOSFET, 逻辑电平,60V,4A,60mΩ |
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FDC60 | ASTRODYNE |
获取价格 |
Isolated and Regulated 60 WATT Modular DC/DC Converters |
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FDC6000NZ | FAIRCHILD |
获取价格 |
Dual N-Channel 2.5V Specified PowerTrench MOSFET |
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