Datasheet > FDC5614P_F095

FDC5614P_F095

更新时间： 2023-02-15 00:00:00

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	140K
描述
Transistor

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中文翻译

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技术参数
数据手册

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FDC5614P_F095 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
配置：	Single	最大漏极电流 (Abs) (ID)：	3 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	1.6 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

FDC5614P_F095 数据手册

February 2002

FDC5614P

60V P-Channel Logic Level PowerTrench^MOSFET

General Description

Features

This 60V P-Channel MOSFET uses Fairchild’s high

voltage PowerTrench process. It has been optimized for

power management applications.

• –3 A, –60 V.

R_DS(ON)= 0.105 Ω @ V_GS= –10 V

R_DS(ON)= 0.135 Ω @ V_GS= –4.5 V

• Fast switching speed

Applications

• High performance trench technology for extremely

low R_DS(ON)

• DC-DC converters

• Load switch

• Power management

SuperSOT ^TM-6

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

–60

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

–3

–20

(Note 1a)

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

1.6

0.8

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

R_θJC

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.564

FDC5614P

7’’

8mm

3000 units

FDC5614P Rev C1 (W)

2002 Fairchild Semiconductor Corporation

12 3 4 5

中文翻译

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