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FDC5614 PDF预览

FDC5614

更新时间: 2024-01-19 04:20:57
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 141K
描述
60V P-Channel Logic Level PowerTrench MOSFET

FDC5614 数据手册

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February 2002  
FDC5614P  
60V P-Channel Logic Level PowerTrenchMOSFET  
General Description  
Features  
This 60V P-Channel MOSFET uses Fairchild’s high  
voltage PowerTrench process. It has been optimized for  
power management applications.  
–3 A, –60 V.  
RDS(ON) = 0.105 @ VGS = –10 V  
RDS(ON) = 0.135 @ VGS = –4.5 V  
Fast switching speed  
Applications  
High performance trench technology for extremely  
low RDS(ON)  
DC-DC converters  
Load switch  
Power management  
S
D
D
1
2
3
6
5
4
G
D
SuperSOT TM-6  
D
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
–60  
V
VGSS  
ID  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
V
A
20  
–3  
–20  
(Note 1a)  
PD  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
1.6  
0.8  
W
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
78  
30  
RθJA  
RθJC  
°C/W  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
.564  
FDC5614P  
7’’  
8mm  
3000 units  
FDC5614P Rev C1 (W)  
2002 Fairchild Semiconductor Corporation  

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