Datasheet > FDBL86363-F085

FDBL86363-F085

更新时间： 2024-09-14 11:12:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	512K
描述
80 V、240 A、2.0 mΩ、TO-LLN 沟道 PowerTrench®

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中文翻译

获取价格

数据手册

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FDBL86363-F085 数据手册

MOSFET – POWERTRENCH⁾

N-Channel

80 V, 240 A, 2.0 mW

FDBL86363-F085

Features

www.onsemi.com

• Typical R

• Typical Q

• UIS Capability

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

= 1.5 mꢀ at V = 10 V, I = 80 A

GS D

DS(on)

= 130 nC at V = 10 V, I = 80 A

g(tot)

Applications

• Automotive Engine Control

• PowerTrain Management

• Solenoid and Motor Drivers

• Integrated Starter/Alternator

• Primary Switch for 12 V Systems

N−Channel

MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Symbol

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Drain Current − Continuous

Ratings

Unit

DSS

H−PSOF8L

CASE 100CU

240

(V = 10), T = 25°C (Note 1)

See Figure 4

512

Pulsed Drain Current, T = 25°C

MARKING DIAGRAM

Single Pulse Avalanche Energy

(Note 2)

357

2.38

Power Dissipation

$Y&Z&3&K

FDBL

86363

W/°C

°C

Derate Above 25°C

T , T

−55 to +175

0.42

Operating and Storage Temperature

Thermal Resistance, Junction to Case

STG

°C/W

ꢁ

Maximum Thermal Resistance,

Junction to Ambient (Note 3)

= ON Semiconductor Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Current is limited by silicon.

FDBL86363

= Specific Device Code

2. Starting T = 25°C, L = 0.25 mH, I = 64 A, V = 80 V during inductor

charging and V = 0 V during time in avalanche.

3. R

is the sum of the junction−to−case and case−to−ambient thermal

ꢁ

ORDERING INFORMATION

resistance, where the case thermal reference is defined as the solder

{

mounting surface of the drain pins. R

is guaranteed by design, while R

ꢁ

Device

Top Mark

Package Shipping

ꢁ

is determined by the board design. The maximum rating presented here is

FDBL86363 FDBL86363 H−PSOF8L 2000 Units/

based on mounting on a 1 in pad of 2oz copper.

−F085

Tape&Reel

*For additional information on our Pb−Free strategy

and soldering details, please download the

ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

Publication Order Number:

January, 2020 − Rev. 3

FDBL86363−F085/D

12 3 4 5 6 7

中文翻译

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与FDBL86363-F085相关器件

型号	品牌	获取价格	描述	数据表
FDBL86366-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，80V，220A，3.0mΩ
FDBL86561-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，60V，300A，1.1mΩ
FDBL86563-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，60V，240A，1.5mΩ
FDBL86566-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，60V，240A，2.4mΩ
FDBL9401-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，40V，300A，0.5mΩ
FDBL9401-F085T6	ONSEMI	获取价格	Power MOSFET, Single N-Channel, 40 V, 0.67 mΩ
FDBL9401L-F085	ONSEMI	获取价格	N 沟道，逻辑电平，PowerTrench® MOSFET，40 V，300 A，0.55
FDBL9403-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，40V，240 A，0.9 mΩ
FDBL9403-F085T6	ONSEMI	获取价格	Power MOSFET, Single N-Channel, TOLL, 40 V, 0
FDBL9403L-F085	ONSEMI	获取价格	N 沟道，逻辑电平，PowerTrench® MOSFET，40 V，240 A，0.72

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