Datasheet > FDBL9403L-F085

FDBL9403L-F085

更新时间： 2024-09-14 11:14:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	446K
描述
N 沟道，逻辑电平，PowerTrench® MOSFET，40 V，240 A，0.72 mΩ

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FDBL9403L-F085 数据手册

FDBL9403L-F085

Single N‐Channel Power

MOSFET

40 V, 240 A, 0.72 mW

Features

www.onsemi.com

• Small Footprint (TOLL) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

(BR)DSS

DS(ON)

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

0.72 mW @ 10 V

0.98 mW @ 4.5 V

40 V

80 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

D (9)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

G (1)

Continuous Drain

Current R

Steady

State

= 25°C

240

(Notes 1, 3)

S (2 − 8)

N-CHANNEL MOSFET

Power Dissipation

Steady

State

= 25°C

= 100°C

= 25°C

357.1

178.6

53.3

37.7

3.5

(Note 1)

Continuous Drain

Current R

Steady

State

= 100°C

= 25°C

(Notes 1, 2, 3)

Power Dissipation

Steady

State

(Notes 1, 2)

= 100°C

1.7

H−PSOF8L

CASE 100CU

Pulsed Drain Current

= 25°C, t = 10 ms

2113

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

100

624

MARKING DIAGRAM

Single Pulse Drain−to−Source Avalanche

Energy (I

= 79 A, L = 0.2 mH)

L(pk)

Lead Temperature for Soldering Purposes

260

°C

&Z&3&K

FDBL

9403L

(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. The entire application environment impacts the thermal resistance values

shown, they are not constants and are only valid for the particular conditions

noted. Current is limited by bondwire configuration.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

= Assembly Plant Code

= Numeric Date Code

= Lot Code

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

FDBL9403L

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 7 of

this data sheet.

Publication Order Number:

May, 2018 − Rev. 0

FDBL9403L−F085/D

12 3 4 5 6 7 8

中文翻译

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与FDBL9403L-F085相关器件

型号	品牌	获取价格	描述	数据表
FDBL9406-F085	ONSEMI	获取价格	N 沟道 PowerTrench® MOSFET，40 V，240 A，1.2 mΩ
FDBL9406-F085T6	ONSEMI	获取价格	Power MOSFET, Single N-Channel, TOLL, 40 V, 1
FDBL9406L-F085	ONSEMI	获取价格	汽车级 MOSFET，N 沟道，逻辑电平，40 V，240 A，1.1 mΩ
FDBP1C1	ETC	获取价格	Distinctive features and specifications
FDBP1D1	ETC	获取价格	Distinctive features and specifications
FDBP1F1	ETC	获取价格	Distinctive features and specifications
FDBP1G1	ETC	获取价格	Distinctive features and specifications
FDBP3C1	ETC	获取价格	Distinctive features and specifications
FDBP3D1	ETC	获取价格	Distinctive features and specifications
FDBP3F1	ETC	获取价格	Distinctive features and specifications

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