Datasheet > FDBL9401-F085T6

FDBL9401-F085T6

更新时间： 2024-09-14 11:14:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	444K
描述
Power MOSFET, Single N-Channel, 40 V, 0.67 mΩ, 240 A

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FDBL9401-F085T6 数据手册

MOSFET - Power, Single

N-Channel, TOLL

40 V, 0.67 mW, 240 A

FDBL9401-F085T6

Features

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

www.onsemi.com

• AEC−Q101 Qualified and PPAP Capable

• Small Footprint (TOLL) for Compact Design

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAX

I MAX

(BR)DSS

DS(ON)

40 V

0.67 mW @ 10 V

240 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

D (9)

DSS

Gate−to−Source Voltage

+20/−16

240

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

G (1)

240

(Notes 1, 3)

Steady

State

Power Dissipation

180.7

90.3

58.4

41.3

4.3

(Note 1)

= 100°C

S (2 − 8)

Continuous Drain

Current R

T = 25°C

N−CHANNEL MOSFET

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

(Notes 1, 2)

T = 100°C

2.1

Pulsed Drain Current

T = 25°C, t = 10 ms

2758

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

138

H−PSOF8L

CASE 100CU

Single Pulse Drain−to−Source Avalanche

1012

Energy (I

= 45 A, L = 1 mH)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

ORDERING INFORMATION

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

†

Device

Package

Shipping

FDBL9401−F085T6 H−PSOF8L 2000 / Tape &

(Pb−Free) Reel

THERMAL RESISTANCE MAXIMUM RATINGS

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Parameter

Symbol

Value

0.83

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values

shown, they are not constants and are only valid for the particular conditions

noted. Current is limited by bondwire configuration.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

May, 2021 − Rev. 2

FDBL9401−F085T6/D

12 3 4 5 6 7

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与FDBL9401-F085T6相关器件

型号	品牌	获取价格	描述	数据表
FDBL9401L-F085	ONSEMI	获取价格	N 沟道，逻辑电平，PowerTrench® MOSFET，40 V，300 A，0.55
FDBL9403-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，40V，240 A，0.9 mΩ
FDBL9403-F085T6	ONSEMI	获取价格	Power MOSFET, Single N-Channel, TOLL, 40 V, 0
FDBL9403L-F085	ONSEMI	获取价格	N 沟道，逻辑电平，PowerTrench® MOSFET，40 V，240 A，0.72
FDBL9406-F085	ONSEMI	获取价格	N 沟道 PowerTrench® MOSFET，40 V，240 A，1.2 mΩ
FDBL9406-F085T6	ONSEMI	获取价格	Power MOSFET, Single N-Channel, TOLL, 40 V, 1
FDBL9406L-F085	ONSEMI	获取价格	汽车级 MOSFET，N 沟道，逻辑电平，40 V，240 A，1.1 mΩ
FDBP1C1	ETC	获取价格	Distinctive features and specifications
FDBP1D1	ETC	获取价格	Distinctive features and specifications
FDBP1F1	ETC	获取价格	Distinctive features and specifications

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