MOSFET - Power, Single
N-Channel, TOLL
40 V, 0.95 mW, 300 A
FDBL9403-F085T6
Features
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
www.onsemi.com
G
• AEC−Q101 Qualified and PPAP Capable
• Small Footprint (TOLL) for Compact Design
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
40 V
0.95 mW @ 10 V
300 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
D (9)
V
DSS
Gate−to−Source Voltage
V
+20/−16
300
V
GS
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
A
C
D
q
JC
G (1)
T
C
217
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
159.6
79.8
50
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
S (2 − 8)
Continuous Drain
Current R
T = 25°C
A
I
D
N−CHANNEL MOSFET
q
JA
T = 100°C
A
36
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
4.3
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
2.1
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
3565
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
330
A
S
H−PSOF8L
CASE 100CU
Single Pulse Drain−to−Source Avalanche
E
AS
612.5
mJ
Energy (I
= 35 A, L = 1 mH)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†
Device
Package
Shipping
FDBL9403−F085T6 H−PSOF8L 2000 / Tape &
(Pb−Free) Reel
THERMAL RESISTANCE MAXIMUM RATINGS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Parameter
Symbol
Value
0.94
35
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
q
JA
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted. Current is limited by bondwire configuration.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
June, 2020 − Rev. 0
FDBL9403−F085T6/D