July 2007
TM
UniFET
FDA16N50 / FDA16N50_F109
500V N-Channel MOSFET
Features
Description
•
•
•
•
•
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16.5A, 500V, RDS(on) = 0.38Ω @VGS = 10 V
Low gate charge ( typical 32 nC)
Low Crss ( typical 20 pF)
Fast switching
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
100% avalanche tested
Improved dv/dt capability
D
G
TO-3P
FDA Series
G D S
S
Absolute Maximum Ratings
Symbol
Parameter
FDA16N50
Unit
VDSS
Drain-Source Voltage
Drain Current
500
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
16.5
9.9
A
A
(Note 1)
(Note 2)
IDM
Drain Current
- Pulsed
66
A
V
VGSS
EAS
IAR
Gate-Source voltage
±30
780
16.5
20.5
4.5
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
(Note 1)
(Note 1)
(Note 3)
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
mJ
V/ns
Power Dissipation
(TC = 25°C)
- Derate above 25°C
205
2.1
W
W/°C
T
J, TSTG
Operating and Storage Temperature Range
-55 to +150
300
°C
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
Thermal Characteristics
Symbol
Parameter
Typ
Max
0.6
--
Unit
°C/W
°C/W
°C/W
RθJC
RθCS
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
--
0.24
--
40
©2007 Fairchild Semiconductor Corporation
FDA16N50 / FDA16N50_F109 Rev. B1
1
www.fairchildsemi.com