Datasheet > FDA20N50_12

FDA20N50_12

更新时间： 2024-11-06 11:59:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
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描述
500V N-Channel MOSFET

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FDA20N50_12 数据手册

February 2012

UniFET

FDA20N50 / FDA20N50_F109

500V N-Channel MOSFET

Features

Description

•

22A, 500V, R_DS(on)= 0.23Ω @V_GS= 10 V

Low gate charge ( typical 45.6 nC)

Low C_rss( typical 27 pF)

Fast switching

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

100% avalanche tested

Improved dv/dt capability

TO-3P

FDA Series

G D S

Absolute Maximum Ratings

Symbol

Parameter

FDA20N50

Unit

V_DSS

Drain-Source Voltage

Drain Current

500

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

13.2

(Note 1)

(Note 2)

I_DM

Drain Current

- Pulsed

± 30

1110

V_GSS

E_AS

I_AR

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

(Note 1)

(Note 3)

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

28.0

V/ns

Power Dissipation

(T_C= 25°C)

- Derate above 25°C

280

2.3

W/°C

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

300

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

°C

* Drain current limited by maximum junction termperature.

Thermal Characteristics

Symbol

Parameter

Min.

Max.

0.44

Unit

°C/W

R_θJC

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

0.24

R_θCS

R_θJA

Thermal Resistance, Junction-to-Ambient

FDA20N50 / FDA20N50_F109 Rev.C0

www.fairchildsemi.com

12 3 4 5 6 7...9

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