Datasheet > FCX717

FCX717

更新时间： 2024-11-18 12:33:39

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	201K
描述
2W power dissipation, Extremely low saturation voltage E.g. 12mv Typ

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FCX717 数据手册

SMD Type

tIo

oCr

Product specification

FCX717

Features

2W power dissipation.

10A peak pulse current.

Excellent H^FEcharacteristics up to 10 Amps.

Extremely low saturation voltage E.g. 12mv Typ.

Extremely low equivalent on-resistance.

R^CE(sat)77mÙ at 3A.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^CM

Rating

-12

Unit

Collector-emitter voltage

Emitter-base voltage

-12

-5

Continuous collector current

-10

Peak pulse current

I^C

-3

Base current

I^B

-500

Power dissipation

P^tot

Operating and storage temperature range

T^j,T^stg

-55 to +150

http://www.twtysemi.com

1 of 2

sales@twtysemi.com

4008-318-123

中文翻译

下载PDF

与FCX717相关器件

型号	品牌	获取价格	描述	数据表
FCX717TA	DIODES	获取价格	Transistor
FCX718	ZETEX	获取价格	PNP SILICON POWER (SWITCHING) TRANSISTOR
FCX718	KEXIN	获取价格	PNP Silicon Power Switching Transistor
FCX718	TYSEMI	获取价格	Extremely low equivalent on-resistance RCE(sa
FCX718	DIODES	获取价格	SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR
FCX718TA	DIODES	获取价格	Transistor
FCX718TC	DIODES	获取价格	Transistor
FCX734	DIODES	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, SOT-89
FCX749	ZETEX	获取价格	Transistor
FCX753TA	DIODES	获取价格	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,