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FCX718 PDF预览

FCX718

更新时间: 2024-11-18 06:59:03
品牌 Logo 应用领域
科信 - KEXIN 晶体开关晶体管
页数 文件大小 规格书
2页 52K
描述
PNP Silicon Power Switching Transistor

FCX718 数据手册

 浏览型号FCX718的Datasheet PDF文件第2页 
SMD Type  
Transistors  
PNP Silicon Power Switching Transistor  
FCX718  
Features  
2W power dissipation.  
6A peak pulse current.  
Excellent HFE characteristics up to 6 Amps.  
Extremely low saturation voltage E.g. 16mv Typ.  
Extremely low equivalent on-resistance.  
RCE(sat) 96mÙ at 2.5A.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
VCBO  
VCEO  
VEBO  
ICM  
-20  
-20  
-5  
Collector-emitter voltage  
Emitter-base voltage  
V
V
Continuous collector current  
-6  
A
Peak pulse current  
IC  
-2.5  
A
mA  
W
Base current  
IB  
-500  
1
Power dissipation  
Ptot  
Operating and storage temperature range  
Tj,Tstg  
-55 to +150  
1
www.kexin.com.cn  

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