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FCX789A PDF预览

FCX789A

更新时间: 2024-11-21 10:31:59
品牌 Logo 应用领域
美台 - DIODES 晶体开关晶体管
页数 文件大小 规格书
3页 79K
描述
SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR

FCX789A 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOT-89包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.38
外壳连接:COLLECTOR最大集电极电流 (IC):3 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):300JESD-30 代码:R-PSSO-F3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):1.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:MATTE TIN端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

FCX789A 数据手册

 浏览型号FCX789A的Datasheet PDF文件第2页浏览型号FCX789A的Datasheet PDF文件第3页 
SOT89 PNP SILICON POWER  
FCX789A  
(SWITCHING) TRANSISTOR  
ISSSUE 1 -NOVEMBER 1998  
FEATURES  
*
*
*
*
2W POWER DISSIPATION  
8A Peak Pulse Current  
Excellent HFE Characteristics up to 10 Amps  
Low Saturation Voltage E.g. 10mv Typ.  
C
Complimentary Type -  
Partmarking Detail -  
FCX688B  
789  
E
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
-25  
-25  
-5  
UNIT  
Collector-Base Voltage  
V
V
V
A
A
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current **  
-8  
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
IC  
-3  
Ptot  
1 †  
2 ‡  
W
W
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +150  
°C  
recommended Ptot calculated using FR4 measuring 15x15x0.6mm  
Maximum power dissipation is calculated assuming that the device is mounted on FR4  
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by  
other suppliers.  
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for these devices  
Refer to the handling instructions when soldering surface mount components.  

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