FCX790ATC

更新时间： 2024-11-18 13:07:47

品牌	Logo	应用领域
美台 - DIODES		晶体开关小信号双极晶体管
页数	文件大小	规格书
3页	58K
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数据手册

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FCX790ATC 数据手册

SOT89 PNP SILICON POWER

FCX790A

(SWITCHING) TRANSISTOR

ISSUE 3 - OCTOBER 2005

FEATURES

2 W P OWER DIS S IP ATION

6A Peak Pulse Current

Excellent H_FECharacteristics

Low Saturation Voltages

Partm arking Detail -

790

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

-50

-40

-5

UNIT

Collector-Base Voltage

Collector-Em itter Voltage

Em itter-Base Voltage

Peak Pulse Current **

-6

Continuous Collector Current

Power Dissipation at T_{am b}=25°C

I_C

-2

P_tot

†

‡

Operating and Storage Tem perature Range

T_j:T_stg

-55 to +150

°C

†

‡

recom m ended P_totcalculated using FR4 m easuring 15x15x0.6m m

Maxim um power dissipation is calculated assum ing that the device is m ounted on FR4

substrate m easuring 40x40x0.6m m and using com parable m easurem ent m ethods adopted by

other suppliers.

**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Spice param eter data is available upon request for these devices

Refer to the handling instructions when soldering surface m ount com ponents.

12 3

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