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FCX789A PDF预览

FCX789A

更新时间: 2024-11-18 06:59:03
品牌 Logo 应用领域
科信 - KEXIN 晶体开关晶体管
页数 文件大小 规格书
2页 52K
描述
PNP Silicon Power Switching Transistor

FCX789A 数据手册

 浏览型号FCX789A的Datasheet PDF文件第2页 
SMD Type  
Transistors  
PNP Silicon Power Switching Transistor  
FCX789A  
Features  
2W power dissipation.  
8A peak pulse current.  
Excellent HFE characteristics up to 10 Amps.  
Extremely low saturation voltage E.g. 10mv Typ.  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Rating  
Unit  
V
-25  
-25  
-5  
Collector-emitter voltage  
Emitter-base voltage  
V
V
Continuous collector current  
-8  
A
Peak pulse current  
IC  
-3  
1
A
Power dissipation  
Ptot  
W
Operating and storage temperature range  
Tj,Tstg  
-55 to +150  
1
www.kexin.com.cn  

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