FCX718TA

更新时间： 2024-11-18 13:07:43

品牌	Logo	应用领域
美台 - DIODES		晶体开关小信号双极晶体管
页数	文件大小	规格书
3页	54K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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FCX718TA 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
Factory Lead Time：	15 weeks	风险等级：	2.12
最大集电极电流 (IC)：	2.5 A	配置：	Single
最小直流电流增益 (hFE)：	15	JESD-609代码：	e3
湿度敏感等级：	1	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	2 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Matte Tin (Sn)	标称过渡频率 (fT)：	150 MHz
Base Number Matches：	1

FCX718TA 数据手册

SOT89 PNP SILICON POWER

FCX718

(SWITCHING) TRANSISTOR

ISSSUE 1 - DECEMBER 1998

FEATURES

2W POWER DISSIPATION

6A Peak Pulse Current

Excellent H_FECharacteristics up to 6Amps

Extremely Low Saturation Voltage E.g. 16mv Typ.

Extremely Low Equivalent On-resistance;

_CE(sat)96mΩ at 2.5A

Partmarking Detail -

718

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-20

-5

Peak Pulse Current **

-6

Continuous Collector Current

Base Current

I_C

-2.5

-500

I_B

Power Dissipation at T_amb=25°C

P_tot

1 †

2 ‡

Operating and Storage Temperature Range

T_j:T_stg

-55 to +150

°C

†

‡

recommended P_totcalculated using FR4 measuring 15x15x0.6mm

Maximum power dissipation is calculated assuming that the device is mounted on FR4

substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by

other suppliers.

**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for these devices

Refer to the handling instructions for soldering surface mount components.

12 3

中文翻译

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