FCX717

更新时间： 2024-11-18 10:31:59

品牌	Logo	应用领域
美台 - DIODES		晶体开关晶体管
页数	文件大小	规格书
2页	48K
描述
SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR

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FCX717 数据手册

SOT89 PNP SILICON POWER

FCX717

(SWITCHING) TRANSISTOR

ISSSUE 1 - MAY 1999

FEATURES

2W POWER DISSIPATION

10A Peak Pulse Current

Excellent H_FECharacteristics up to 10 Amps

Extremely Low Saturation Voltage E.g. 12mv Typ.

Extremely Low Equivalent On-resistance;

_CE(sat)77m at 3A

Partmarking Detail -

717

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-12

-5

Peak Pulse Current **

-10

-3

Continuous Collector Current

Base Current

I_C

I_B

-500

Power Dissipation at T_amb=25°C

P_tot

1 †

2 ‡

Operating and Storage Temperature Range

T_j:T_stg

-55 to +150

°C

†

‡

recommended P_totcalculated using FR4 measuring 15x15x0.6mm

Maximum power dissipation is calculated assuming that the device is mounted on FR4

substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by

other suppliers.

**Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%

Spice parameter data is available upon request for these devices

Refer to the handling instructions for soldering surface mount components.

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