Datasheet > FCX717

FCX717

更新时间： 2024-11-18 06:59:03

品牌	Logo	应用领域
科信 - KEXIN		晶体开关晶体管
页数	文件大小	规格书
2页	52K
描述
PNP Silicon Power Switching Transistor

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数据手册

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FCX717 数据手册

SMD Type

Transistors

PNP Silicon Power Switching Transistor

FCX717

Features

2W power dissipation.

10A peak pulse current.

Excellent HFE characteristics up to 10 Amps.

Extremely low saturation voltage E.g. 12mv Typ.

Extremely low equivalent on-resistance.

R^CE(sat)77mÙ at 3A.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

-12

Unit

V^CBO

V^CEO

V^EBO

I^CM

Collector-emitter voltage

Emitter-base voltage

-12

-5

Continuous collector current

-10

Peak pulse current

I^C

-3

Base current

I^B

-500

Power dissipation

P^tot

Operating and storage temperature range

T^j,Tstg

-55 to +150

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