Datasheet > ESH1D

ESH1D

更新时间： 2024-11-04 12:57:03

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	304K
描述
1A patch fast recovery diode 200V SMA series

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中文翻译

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ESH1D 数据手册

ESH1B - ESH1D

SURFACE MOUNT ULTRAFAST PLASTIC RECTIFIER DIODES

VOLTAGE RANGE: 100 - 200V

CURRENT: 1.0 A

Features

Low profile package

Ideal for automated placement

Glass passivated chip junction

Ultrafast recovery times for high efficiency

Low forward voltage, low power loss

SMA(DO-214AC)

Mechanical Data

Dim

MinMax

2.29

4.00

1.27

0.15

4.80

0.10

0.76

2.01

2.92

4.60

1.63

0.31

5.59

0.20

1.52

2.62

Case: SMA(DO-214AC)Molded Plastic

Case Material - UL Flammability Rating

Classification 94V-0

Terminals: Solder Plated Terminal -

Solderable per MIL-STD-202, Method 208

Polarity: Cathode Band or Cathode Notch

Approx. Weight: SMA 0.064 grams

All Dimensions in mm

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Characteristic

Symbol

ESH1B

ESH1C

ESH1D

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

150

200

140

RMS Reverse Voltage

V^R(RMS)

I^O

105

1.0

Average Rectified Output Current

@T_L= 120°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage

@I_F= 1.0A

V^FM

I^RM

0.90

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

1.0

µA

Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

t^rr

C^j

R^ꢀ^JL

T^j,T^STG

°C/W

°C

Operating and Storage Temperature Range

-65 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A. See figure 5.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on P.C. Board with 8.0mm²land area.

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