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ESH1PAE3 PDF预览

ESH1PAE3

更新时间: 2024-11-04 14:50:07
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
2页 156K
描述
Rectifier Diode, 1 Element, 1A, 50V V(RRM),

ESH1PAE3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.86 V最大非重复峰值正向电流:50 A
元件数量:1最高工作温度:175 °C
最大输出电流:1 A最大重复峰值反向电压:50 V
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:YESBase Number Matches:1

ESH1PAE3 数据手册

 浏览型号ESH1PAE3的Datasheet PDF文件第2页 
ESH1PA thru ESH1PD  
Vishay Semiconductors  
New Product  
formerly General Semiconductor  
High Current Density Surface Mount Ultrafast Rectifiers  
Reverse Voltage 50 to 200 V  
Cas Style SMP  
Forward Current 1.0 A  
Reverse Recovery Time 25ns  
Cathode band  
Features  
• Very low profile - typical height of 1.0mm  
• For surface mount application  
• Glass passivated chip junction  
0.086 (2.18)  
0.074 (1.88)  
• Ultrafast recovery times for high efficiency  
• Low forward voltage, low power loss  
• High operation temperature up to 175°C  
• Built-in strain relief, ideal for automated placement  
• High temperature soldering guaranteed:  
260°C/10 seconds at terminals  
0.142 (3.61)  
0.126 (3.19)  
0.158 (4.00)  
0.146 (3.70)  
• Meets MSL Level 1 per J-STD-020C  
Mechanical Data  
Dimensions in inches  
and (millimeters)  
Case: SMP  
0.013 (0.35)  
0.004 (0.10)  
0.045 (1.15)  
0.033 (0.85)  
Terminals: Matte Tin plated (E3 Suffix) leads, solderable  
per J-STD-002B and MIL-STD-750, Method 2026  
Polarity: Color band denotes cathode end  
Weight: 0.0009 oz., 0.024g  
Epoxy meets UL 94V-0 flammability rating  
0.012 (0.30)  
0.000 (0.00)  
0.018 (0.45)  
0.006 (0.15)  
Mounting Pad Layout  
0.030  
(0.762)  
0.012 (0.30) REF  
0.105  
(2.67)  
0.025  
(0.635)  
0.053 (1.35)  
0.041 (1.05)  
0.036 (0.91)  
0.024 (0.61)  
0.050  
(1.27)  
0.100  
(2.54)  
0.032 (0.80)  
0.016 (0.40)  
0.103 (2.60)  
0.087 (2.20)  
Maximum Ratings & Thermal Characteristics (TA = 25°C unless otherwise noted.)  
Parameter  
Symbol  
ESH1PA ESH1PB ESH1PC ESH1PD  
Unit  
Device marking code  
Maximum reverse voltage  
Maximum average forward rectified current Fig.1  
Peak forward surge current 10ms single half sine-wave  
superimposed on rated load  
PA  
50  
PB  
100  
PC  
150  
PD  
200  
VRM  
IF(AV)  
V
A
1.0  
50  
IFSM  
A
RθJA  
RθJL  
RθJC  
105  
15  
Typical thermal resistance (1)  
°C/W  
°C  
20  
Operating junction and Storage temperature range  
TJ, TSTG  
–55 to +175  
Electrical Characteristics (TA = 25°C unless otherwise noted.)  
Parameter  
Symbol  
Value  
0.86  
0.90  
Unit  
Maximum instantaneous forward voltage(2) at IF=0.7A, TJ=25°C  
VF  
V
at IF=1A, TJ=25°C  
Maximum reverse current  
at rated VRM(2)  
TJ = 25°C  
TJ =125°C  
1.0  
25  
IR  
µA  
Maximum reverse current at VR = 20V, TJ =150°C  
Maximum reverse recovery time at IF=0.5A, IR=1A, Irr=0.25A  
IR  
trr  
50  
25  
µA  
ns  
Typical reverse recovery time at  
TJ=25°C  
25  
35  
trr  
ns  
at IF = 1.0A, VR = 30V di/dt = 50A/µs, Irr = 10% IRM TJ=100°C  
Typical reverse recovery time at  
TJ=25°C  
10  
15  
25  
Qrr  
CJ  
nC  
pF  
at IF = 1.0A, VR = 30V di/dt = 50A/µs, Irr = 10% IRM TJ=100°C  
Typical junction capacitance at 4.0V, 1MHz  
Notes: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. RθJL is measured at the  
terminal of cathode band. RθJC is measured at the top centre of the body  
(2) Pulse test: 300µs pulse width, 1% duty cycle  
Document Number 88895  
23-Sep-04  
www.vishay.com  
1

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