5秒后页面跳转
ESH1PB PDF预览

ESH1PB

更新时间: 2024-11-04 06:57:55
品牌 Logo 应用领域
威世 - VISHAY 半导体整流二极管光电二极管瞄准线
页数 文件大小 规格书
4页 96K
描述
Vishay General Semiconductor

ESH1PB 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DO-220AA包装说明:R-PDSO-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.67Is Samacsys:N
其他特性:FREE WHEELING DIODE, LOW POWER LOSS外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-220AA
JESD-30 代码:R-PDSO-F2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.025 µs
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

ESH1PB 数据手册

 浏览型号ESH1PB的Datasheet PDF文件第2页浏览型号ESH1PB的Datasheet PDF文件第3页浏览型号ESH1PB的Datasheet PDF文件第4页 
New Product  
ESH1PB, ESH1PC & ESH1PD  
Vishay General Semiconductor  
High Current Density Surface Mount Ultrafast Rectifiers  
FEATURES  
• Very low profile - typical height of 1.0 mm  
eSMPTM Series  
• Ideal for automated placement  
• Glass passivated chip junction  
• Ultrafast recovery times for high frequency  
• Low forward voltage drop, low power loss  
• Low thermal resistance  
DO-220AA (SMP)  
• Meets MSL level 1 per J-STD-020C, LF max peak  
of 260 °C  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in secondary rectification and freewheeling for  
ultrafast switching speeds of ac-to-ac and dc-to-dc  
converters in high temperature conditions for both  
consumer and automotive applications.  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
trr  
1 A  
100 V, 150 V, 200 V  
25 ns  
MECHANICAL DATA  
VF  
0.90 V  
Case: DO-220AA (SMP)  
Tj max.  
175 °C  
Epoxy meets UL-94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
ESH1PB  
ESH1PC  
PC  
ESH1PD  
PD  
UNIT  
Device marking code  
PB  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (Fig. 1)  
VRRM  
IF(AV)  
100  
150  
200  
V
A
1.0  
Peak forward surge current 10 ms single half sine-  
wave superimposed on rated load  
IFSM  
50  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 175  
°C  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
Maximum instantaneous forward at IF = 0.7 A, Tj = 25 °C  
voltage (1)  
at IF = 1 A, Tj = 25 °C  
TEST CONDITIONS  
SYMBOL VALUE  
UNIT  
0.86  
VF  
V
0.90  
Maximum reverse current at rated Tj = 25 °C  
1.0  
25  
IR  
µA  
µA  
VR (1) voltage  
Tj = 125 °C  
Maximum reverse current  
at VR = 20 V, Tj = 150 °C  
IR  
50  
Document Number: 88895  
Revision: 25-Jun-07  
www.vishay.com  
1

与ESH1PB相关器件

型号 品牌 获取价格 描述 数据表
ESH1PB_11 VISHAY

获取价格

High Current Density Surface Mount Ultrafast Rectifiers
ESH1PB-E3 VISHAY

获取价格

Rectifier Diode, 1 Element, 1A, 100V V(RRM),
ESH1PB-E3/84A VISHAY

获取价格

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-220AA, ROHS COMPLIANT, PLASTIC, S
ESH1PB-E3/85A VISHAY

获取价格

Rectifier Diode, 1 Element, 1A, 100V V(RRM),
ESH1PB-E384A VISHAY

获取价格

Vishay General Semiconductor
ESH1PB-E385A VISHAY

获取价格

Vishay General Semiconductor
ESH1PBHE3/84A VISHAY

获取价格

Rectifier Diode, 1 Element, 1A, 100V V(RRM),
ESH1PB-HE3/84A VISHAY

获取价格

1A, 100V, SILICON, SIGNAL DIODE, DO-220AA, LEAD FREE, PLASTIC, SMP, 2 PIN
ESH1PBHE3/85A VISHAY

获取价格

Rectifier Diode, 1 Element, 1A, 100V V(RRM),
ESH1PB-HE3/85A VISHAY

获取价格

1A, 100V, SILICON, SIGNAL DIODE, DO-220AA, LEAD FREE, PLASTIC, SMP, 2 PIN