Datasheet > ESH1PD-HE3

ESH1PD-HE3

更新时间： 2024-11-05 09:27:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	340K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM),

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中文翻译

获取价格

数据手册

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ESH1PD-HE3 数据手册

ESH1PB, ESH1PC & ESH1PD

New Product

Vishay General Semiconductor

High Current Density Surface Mount Ultrafast Rectifiers

Major Ratings and Characteristics

I_F(AV)

V_RRM

t_rr

1 A

100 V, 150 V, 200 V

25 ns

V_F

0.90 V

T_Jmax.

175 °C

DO-220AA (SMP)

Features

Mechanical Data

• Very low profile - typical height of 1.0 mm

Case: DO-220AA (SMP)

• Ideal for automated placement

Epoxy meets UL-94V-0 flammability rating

• Glass passivated chip junction

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• Ultrafast recovery times for high frequency

• Low forward voltage drop, low power loss

• Low thermal resistance

• Meets MSL level 1 per J-STD-020C

• Solder Dip 260 °C, 40 seconds

Polarity: Color band denotes cathode end

Typical Applications

For use in secondary rectification and freewheeling

for ultrafast switching speeds of ac-to-ac and dc-to-dc

converters in high temperature conditions for both

consumer and automotive applications

Maximum Ratings

(T_A= 25 °C unless otherwise specified)

Parameter

Device marking code

Symbol

ESH1PB

ESH1PC

ESH1PD

Unit

Maximum repetitive peak reverse voltage

V_RRM

I_F(AV)

I_FSM

100

150

200

Maximum average forward rectified current (Fig. 1)

1.0

Peak forward surge current 10 ms single half sine-

wave superimposed on rated load

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 175

°C

Document Number 88895

10-Nov-05

www.vishay.com

12 3 4

中文翻译

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