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ESH1PD-HE3/85A PDF预览

ESH1PD-HE3/85A

更新时间: 2024-11-04 15:32:03
品牌 Logo 应用领域
威世 - VISHAY 瞄准线光电二极管
页数 文件大小 规格书
4页 90K
描述
1A, 200V, SILICON, SIGNAL DIODE, DO-220AA, LEAD FREE, PLASTIC, SMP, 2 PIN

ESH1PD-HE3/85A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-220AA包装说明:LEAD FREE, PLASTIC, SMP, 2 PIN
针数:2Reach Compliance Code:unknown
风险等级:5.6其他特性:FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-220AAJESD-30 代码:R-PDSO-F2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.025 µs
表面贴装:YES端子面层:MATTE TIN
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

ESH1PD-HE3/85A 数据手册

 浏览型号ESH1PD-HE3/85A的Datasheet PDF文件第2页浏览型号ESH1PD-HE3/85A的Datasheet PDF文件第3页浏览型号ESH1PD-HE3/85A的Datasheet PDF文件第4页 
ESH1PB, ESH1PC & ESH1PD  
New Product  
Vishay General Semiconductor  
High Current Density Surface Mount Ultrafast Rectifiers  
FEATURES  
• Very low profile - typical height of 1.0 mm  
• Ideal for automated placement  
• Glass passivated chip junction  
• Ultrafast recovery times for high frequency  
• Low forward voltage drop, low power loss  
• Low thermal resistance  
DO-220AA (SMP)  
• Meets MSL level 1 per J-STD-020C, LF max peak  
of 260 °C  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in secondary rectification and freewheeling for  
ultrafast switching speeds of ac-to-ac and dc-to-dc  
converters in high temperature conditions for both  
consumer and automotive applications.  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
trr  
1 A  
100 V, 150 V, 200 V  
25 ns  
MECHANICAL DATA  
VF  
0.90 V  
Case: DO-220AA (SMP)  
Tj max.  
175 °C  
Epoxy meets UL-94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
ESH1PB  
ESH1PC  
PC  
ESH1PD  
PD  
UNIT  
Device marking code  
PB  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (Fig. 1)  
VRRM  
IF(AV)  
100  
150  
200  
V
A
1.0  
Peak forward surge current 10 ms single half sine-  
wave superimposed on rated load  
IFSM  
50  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 175  
°C  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
Maximum instantaneous forward at IF = 0.7 A, Tj = 25 °C  
voltage (1)  
at IF = 1 A, Tj = 25 °C  
TEST CONDITIONS  
SYMBOL VALUE  
UNIT  
0.86  
VF  
V
0.90  
Maximum reverse current at rated Tj = 25 °C  
1.0  
25  
IR  
µA  
µA  
VR (1) voltage  
Tj = 125 °C  
Maximum reverse current  
at VR = 20 V, Tj = 150 °C  
IR  
50  
Document Number 88895  
23-Jun-06  
www.vishay.com  
1

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