Datasheet > ESH2B_08

ESH2B_08

更新时间： 2024-11-04 06:57:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	104K
描述
Surface Mount Ultrafast Plastic Rectifier

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中文翻译

获取价格

数据手册

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ESH2B_08 数据手册

New Product

ESH2B, ESH2C & ESH2D

Vishay General Semiconductor

Surface Mount Ultrafast Plastic Rectifier

FEATURES

• Glass passivated chip junction

• Ideal for automated placement

• Ultrafast recovery times for high efficiency

• Low forward voltage, low power loss

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Solder dip 260 °C, 40 s

DO-214AA (SMB)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectification and

freewheeling application in switching mode converter

and inverter for both consumer and automotive.

PRIMARY CHARACTERISTICS

I_F(AV)

2 A

MECHANICAL DATA

Case: DO-214AA (SMB)

V_RRM

t_rr

100 V, 150 V, 200 V

25 ns

Epoxy meets UL 94V-0 flammability rating

V_F

0.93 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

T_Jmax.

175 °C

E3 suffix for commercial grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

ESH2B

EHB

100

ESH2C

EHC

150

ESH2D

EHD

200

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

105

140

Maximum DC blocking voltage

Maximum average forward rectified current (Fig. 1)

100

150

200

I_F(AV)

2.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 175

°C

Document Number: 84649

Revision: 27-Aug-07

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

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