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ESH2BHE3/52T PDF预览

ESH2BHE3/52T

更新时间: 2024-11-04 19:51:03
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线光电二极管
页数 文件大小 规格书
5页 94K
描述
DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode

ESH2BHE3/52T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.08
其他特性:FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.93 V
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:60 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.025 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

ESH2BHE3/52T 数据手册

 浏览型号ESH2BHE3/52T的Datasheet PDF文件第2页浏览型号ESH2BHE3/52T的Datasheet PDF文件第3页浏览型号ESH2BHE3/52T的Datasheet PDF文件第4页浏览型号ESH2BHE3/52T的Datasheet PDF文件第5页 
ESH2B, ESH2C, ESH2D  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount Ultrafast Plastic Rectifier  
FEATURES  
• Glass passivated pellet chip junction  
• Ideal for automated placement  
• Ultrafast recovery times for high efficiency  
• Low forward voltage, low power loss  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3  
DO-214AA (SMB)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in high frequency rectification and freewheeling  
application in switching mode converter and inverter for  
both consumer and automotive.  
PRIMARY CHARACTERISTICS  
IF(AV)  
2.0 A  
MECHANICAL DATA  
Case: DO-214AA (SMB)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B,.....)  
VRRM  
trr  
100 V, 150 V, 200 V  
25 ns  
VF at IF = 2 A  
TJ max.  
0.93 V  
175 °C  
Package  
DO-214AA (SMB)  
Single die  
Diode variations  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
ESH2B  
EHB  
100  
ESH2C  
EHC  
150  
ESH2D  
EHD  
200  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
V
V
V
A
70  
105  
140  
Maximum DC blocking voltage  
Maximum average forward rectified current (fig. 1)  
100  
150  
200  
IF(AV)  
2.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
60  
A
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +175  
°C  
Revision: 25-Feb-16  
Document Number: 84649  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

ESH2BHE3/52T 替代型号

型号 品牌 替代类型 描述 数据表
ESH2BHE3_A/H VISHAY

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Rectifier Diode, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AA, SMB, 2 PIN

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