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ESH2B-HE3/52T PDF预览

ESH2B-HE3/52T

更新时间： 2024-11-04 15:32:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 348K
描述
DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode

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中文翻译

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ESH2B-HE3/52T 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-214AA
包装说明：ROHS COMPLIANT, PLASTIC, SMB, 2 PIN针数：2
Reach Compliance Code：unknown风险等级：5.76
Base Number Matches：1

ESH2B-HE3/52T 数据手册

 浏览型号ESH2B-HE3/52T的Datasheet PDF文件第2页浏览型号ESH2B-HE3/52T的Datasheet PDF文件第3页浏览型号ESH2B-HE3/52T的Datasheet PDF文件第4页 
ESH2B, ESH2C, ESH2D  
Vishay General Semiconductor  
www.vishay.com  
FEATURES  
• Glass passivated chip junction  
• Ideal for automated placement  
• Ultrafast recovery times for high efficiency  
• Low forward voltage, low power loss  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• AEC-Q101 qualified  
DO-214AA (SMB)  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in high frequency rectification and freewheeling  
application in switching mode converter and inverter for  
both consumer and automotive.  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
2.0 A  
Case: DO-214AA (SMB)  
VRRM  
trr  
100 V, 150 V, 200 V  
25 ns  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
VF  
0.93 V  
TJ max.  
175 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
ESH2B  
EHB  
100  
ESH2C  
EHC  
150  
ESH2D  
EHD  
200  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
V
V
V
A
70  
105  
140  
Maximum DC blocking voltage  
Maximum average forward rectified current (fig. 1)  
100  
150  
200  
IF(AV)  
2.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
60  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 175  
°C  
Revision: 07-Feb-12  
Document Number: 84649  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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