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ESH2D-E3/5BT

更新时间: 2024-11-04 06:57:55
品牌 Logo 应用领域
威世 - VISHAY 整流二极管光电二极管瞄准线功效
页数 文件大小 规格书
4页 104K
描述
Surface Mount Ultrafast Plastic Rectifier

ESH2D-E3/5BT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.08
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.93 VJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:60 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.025 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

ESH2D-E3/5BT 数据手册

 浏览型号ESH2D-E3/5BT的Datasheet PDF文件第2页浏览型号ESH2D-E3/5BT的Datasheet PDF文件第3页浏览型号ESH2D-E3/5BT的Datasheet PDF文件第4页 
New Product  
ESH2B, ESH2C & ESH2D  
Vishay General Semiconductor  
Surface Mount Ultrafast Plastic Rectifier  
FEATURES  
• Glass passivated chip junction  
• Ideal for automated placement  
• Ultrafast recovery times for high efficiency  
• Low forward voltage, low power loss  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Solder dip 260 °C, 40 s  
DO-214AA (SMB)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in high frequency rectification and  
freewheeling application in switching mode converter  
and inverter for both consumer and automotive.  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 A  
MECHANICAL DATA  
Case: DO-214AA (SMB)  
VRRM  
trr  
100 V, 150 V, 200 V  
25 ns  
Epoxy meets UL 94V-0 flammability rating  
VF  
0.93 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
TJ max.  
175 °C  
E3 suffix for commercial grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
ESH2B  
EHB  
100  
ESH2C  
EHC  
150  
ESH2D  
EHD  
200  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
V
V
V
A
70  
105  
140  
Maximum DC blocking voltage  
Maximum average forward rectified current (Fig. 1)  
100  
150  
200  
IF(AV)  
2.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
60  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 175  
°C  
Document Number: 84649  
Revision: 27-Aug-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

ESH2D-E3/5BT 替代型号

型号 品牌 替代类型 描述 数据表
MURS120T3G ONSEMI

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