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ESH2B-HE3 PDF预览

ESH2B-HE3

更新时间: 2024-11-04 19:45:27
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线光电二极管
页数 文件大小 规格书
4页 354K
描述
DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN, Rectifier Diode

ESH2B-HE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.59
其他特性:LOW POWER LOSS, FREE WHEELING DIODE, HIGH RELIABILITY应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:60 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:0.025 µs表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

ESH2B-HE3 数据手册

 浏览型号ESH2B-HE3的Datasheet PDF文件第2页浏览型号ESH2B-HE3的Datasheet PDF文件第3页浏览型号ESH2B-HE3的Datasheet PDF文件第4页 
ESH2B, ESH2C & ESH2D  
New Product  
Vishay General Semiconductor  
Surface Mount Ultrafast Plastic Rectifiers  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
trr  
2 A  
100 V, 150 V, 200 V  
25 ns  
VF  
0.93 V  
TJ max.  
175 °C  
DO-214AA (SMB)  
Features  
Mechanical Data  
• Glass passivated chip junction  
• Ideal for automated placement  
• Ultrafast recovery times for high efficiency  
• Low forward voltage, low power loss  
• High forward surge capability  
Case: DO-214AA (SMB)  
Epoxy meets UL 94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Meets MSL level 1 per J-STS-020C  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in high frequency rectification and freewheel-  
ing application in switching mode converter and  
inverter for both consumer and automotive  
Maximum Ratings  
TA = 25 °C, unless otherwise specified  
Parameter  
Symbol  
ESH2B  
EHB  
ESH2C  
EHC  
ESH2D  
EHD  
Unit  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
100  
150  
200  
V
V
V
A
A
70  
105  
150  
2.0  
60  
140  
200  
Maximum DC blocking voltage  
100  
Maximum average forward rectified current (Fig. 1)  
IF(AV)  
IFSM  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 175  
°C  
Document Number 84649  
17-Oct-05  
www.vishay.com  
1

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