Datasheet > ESH1PCHE3/85A

ESH1PCHE3/85A

更新时间： 2024-11-04 15:32:03

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
4页	100K
描述
Rectifier Diode, 1 Element, 1A, 150V V(RRM),

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

ESH1PCHE3/85A 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.83
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.86 V	最大非重复峰值正向电流：	50 A
元件数量：	1	最高工作温度：	175 °C
最大输出电流：	1 A	最大重复峰值反向电压：	150 V
最大反向恢复时间：	0.025 µs	子类别：	Rectifier Diodes
表面贴装：	YES	Base Number Matches：	1

ESH1PCHE3/85A 数据手册

New Product

ESH1PB, ESH1PC, ESH1PD

Vishay General Semiconductor

High Current Density Surface Mount Ultrafast Rectifiers

FEATURES

• Very low profile - typical height of 1.0 mm

eSMP^TMSeries

• Ideal for automated placement

• Glass passivated chip junction

• Ultrafast recovery times for high frequency

• Low forward voltage drop, low power loss

• Low thermal resistance

• Meets MSL level 1 per J-STD-020, LF maximum

peak of 260 °C

DO-220AA (SMP)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in secondary rectification and freewheeling for

ultrafast switching speeds of ac-to-ac and dc-to-dc

converters in high temperature conditions for both

PRIMARY CHARACTERISTICS

consumer and automotive applications.

I_F(AV)

V_RRM

t_rr

1.0 A

100 V, 150 V, 200 V

25 ns

MECHANICAL DATA

Case: DO-220AA (SMP)

Epoxy meets UL 94 V-0 flammability rating

V_F

0.90 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

T_Jmax.

175 °C

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

ESH1PB

ESH1PC

ESH1PD

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

V_RRM

I_F(AV)

100

150

200

1.0

Peak forward surge current 10 ms single

half sine-wave superimposed on rated load

I_FSM

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 175

°C

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

I_F= 0.7 A

I_F= 1 A

0.86

0.90

Maximum instantaneous forward voltage ⁽¹⁾

T_J= 25 °C

V_F

T_J= 25 °C

T_J= 125 °C

1.0

Maximum reverse current at rated V_Rvoltage ⁽²⁾

Maximum reverse current

I_R

µA

_R= 20 V

T_J= 150 °C

Document Number: 88895

Revision: 11-Nov-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4

中文翻译

下载PDF

与ESH1PCHE3/85A相关器件

型号	品牌	获取价格	描述	数据表
ESH1PC-HE3/85A	VISHAY	获取价格	1A, 150V, SILICON, SIGNAL DIODE, DO-220AA, LEAD FREE, PLASTIC, SMP, 2 PIN
ESH1PCHM3/84A	VISHAY	获取价格	1A, 150V, E.FF SMDIODE
ESH1PD	VISHAY	获取价格	Vishay General Semiconductor
ESH1PD-E3	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM),
ESH1PD-E3/85A	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM),
ESH1PD-HE3	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM),
ESH1PDHE3/84A	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM),
ESH1PDHE3/85A	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 200V V(RRM),
ESH1PD-HE3/85A	VISHAY	获取价格	1A, 200V, SILICON, SIGNAL DIODE, DO-220AA, LEAD FREE, PLASTIC, SMP, 2 PIN
ESH1PDHM3/85A	VISHAY	获取价格	1A, 200V, E.FF SMDIODE

与ESH1PCHE3/85A相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

7
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

30

产品中心

服务支持

精选活动

关于我们

帮助中心

ESH1PCHE3/85A

ESH1PCHE3/85A 技术参数

ESH1PCHE3/85A 数据手册

与ESH1PCHE3/85A相关器件

与ESH1PCHE3/85A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

ESH1PCHE3/85A

ESH1PCHE3/85A 技术参数

ESH1PCHE3/85A 数据手册

与ESH1PCHE3/85A相关器件

与ESH1PCHE3/85A相关文章

您还可以找

您在本页遇到什么问题？