Datasheet > ESH1DHM3_A/I

ESH1DHM3_A/I

更新时间： 2024-11-04 21:13:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	95K
描述
Rectifier Diode,

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技术参数
数据手册

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ESH1DHM3_A/I 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	Base Number Matches：	1

ESH1DHM3_A/I 数据手册

ESH1B, ESH1C, ESH1D

Vishay General Semiconductor

www.vishay.com

Surface-Mount Ultrafast Plastic Rectifier

FEATURES

Available

• Low profile package

• Ideal for automated placement

• Glass passivated pellet chip junction

• Ultrafast recovery times for high efficiency

• Low forward voltage, low power loss

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

Available

SMA (DO-214AC)

Cathode Anode

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHE3 or P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

LINKS TO ADDITIONAL RESOURCES

3D Models

TYPICAL APPLICATIONS

For use in secondary rectification and freewheeling for

ultrafast switching speeds AC/AC and DC/DC converters in

high temperature conditions for both consumer and

automotive applications.

PRIMARY CHARACTERISTICS

I_F(AV)

1.0 A

MECHANICAL DATA

V_RRM

t_rr

100 V, 150 V, 200 V

25 ns

Case: SMA (DO-214AC)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/N-M3 - halogen-free, RoHS-compliant, commercial

grade

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified

V_Fat I_F

0.90 V

T_Jmax.

175 °C

Package

SMA (DO-214AC)

Single

Circuit configurations

(“_X” denotes revision code e.g. A, B, .....)

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3, M3, HE3, and HM3 suffix meets JESD 201 class 2

whisker test

Polarity: color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

ESH1B

EHB

100

ESH1C

EHC

150

ESH1D

EHD

200

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

105

140

Maximum DC blocking voltage

Maximum average forward rectified current at T_L= 150 °C

100

150

200

I_F(AV)

1.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC^®method)

I_FSM

Operating junction and storage temperature range

T_J, T_STG

-55 to +175

°C

Revision: 08-Apr-2020

Document Number: 88890

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与ESH1DHM3_A/I相关器件

型号	品牌	获取价格	描述	数据表
ESH1D-M3	VISHAY	获取价格	Surface Mount Ultrafast Plastic Rectifier
ESH1D-M3-5AT	VISHAY	获取价格	Surface Mount Ultrafast Plastic Rectifier
ESH1D-M3-61T	VISHAY	获取价格	Surface Mount Ultrafast Plastic Rectifier
ESH1PA	VISHAY	获取价格	High Current Density Surface Mount Ultrafast Rectifiers
ESH1PAE3	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 50V V(RRM),
ESH1PA-E3	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, Silicon, PLASTIC, CASE SMP, 2 PIN
ESH1PB	VISHAY	获取价格	Vishay General Semiconductor
ESH1PB_11	VISHAY	获取价格	High Current Density Surface Mount Ultrafast Rectifiers
ESH1PB-E3	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM),
ESH1PB-E3/84A	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-220AA, ROHS COMPLIANT, PLASTIC, S

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