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ESH1DHE3_A/I PDF预览

ESH1DHE3_A/I

更新时间: 2024-11-04 15:32:03
品牌 Logo 应用领域
威世 - VISHAY 瞄准线光电二极管
页数 文件大小 规格书
5页 88K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

ESH1DHE3_A/I 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMA, 2 PINReach Compliance Code:unknown
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:5.58其他特性:FREE WHEELING DIODE, LOW POWER LOSS
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE参考标准:AEC-Q101
最大重复峰值反向电压:200 V最大反向恢复时间:0.025 µs
表面贴装:YES端子形式:C BEND
端子位置:DUALBase Number Matches:1

ESH1DHE3_A/I 数据手册

 浏览型号ESH1DHE3_A/I的Datasheet PDF文件第2页浏览型号ESH1DHE3_A/I的Datasheet PDF文件第3页浏览型号ESH1DHE3_A/I的Datasheet PDF文件第4页浏览型号ESH1DHE3_A/I的Datasheet PDF文件第5页 
ESH1B, ESH1C, ESH1D  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount Ultrafast Plastic Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated pellet chip junction  
• Ultrafast recovery times for high efficiency  
• Low forward voltage, low power loss  
Available  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
SMA (DO-214AC)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in secondary rectification and freewheeling for  
ultrafast switching speeds AC/AC and DC/DC converters in  
high temperature conditions for both consumer and  
automotive applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
MECHANICAL DATA  
VRRM  
trr  
100 V, 150 V, 200 V  
25 ns  
Case: SMA (DO-214AC)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
VF at IF  
0.90 V  
TJ max.  
175 °C  
Package  
Diode variations  
SMA (DO-214AC)  
Single  
(“_X” denotes revision code e.g. A, B, .....)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
Polarity: color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
ESH1B  
EHB  
100  
ESH1C  
EHC  
150  
ESH1D  
EHD  
200  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
V
V
V
A
70  
105  
140  
Maximum DC blocking voltage  
Maximum average forward rectified current at TL = 150 °C  
100  
150  
200  
IF(AV)  
1.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC® method)  
IFSM  
50  
A
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +175  
°C  
Revision: 21-Jul-17  
Document Number: 88890  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

ESH1DHE3_A/I 替代型号

型号 品牌 替代类型 描述 数据表
ESH1DHE3/5AT VISHAY

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