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ESH1D-HE3/5AT PDF预览

ESH1D-HE3/5AT

更新时间: 2024-11-04 21:03:03
品牌 Logo 应用领域
威世 - VISHAY 瞄准线光电二极管
页数 文件大小 规格书
4页 88K
描述
1A, 200V, SILICON, SIGNAL DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

ESH1D-HE3/5AT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:compliant风险等级:5.6
其他特性:FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.025 µs
表面贴装:YES端子面层:MATTE TIN
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

ESH1D-HE3/5AT 数据手册

 浏览型号ESH1D-HE3/5AT的Datasheet PDF文件第2页浏览型号ESH1D-HE3/5AT的Datasheet PDF文件第3页浏览型号ESH1D-HE3/5AT的Datasheet PDF文件第4页 
ESH1B, ESH1C, ESH1D  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount Ultrafast Plastic Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Ultrafast recovery times for high efficiency  
• Low forward voltage, low power loss  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• AEC-Q101 qualified  
DO-214AC (SMA)  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in secondary rectification and freewheeling for  
ultrafast switching speeds AC/AC and DC/DC converters in  
high temperature conditions for both consumer and  
automotive applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
MECHANICAL DATA  
VRRM  
trr  
100 V, 150 V, 200 V  
25 ns  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
VF  
0.90 V  
TJ max.  
175 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
ESH1B  
EHB  
100  
ESH1C  
EHC  
150  
ESH1D  
EHD  
200  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
V
V
70  
105  
140  
Maximum DC blocking voltage  
VDC  
100  
150  
1.0  
200  
V
A
Maximum average forward rectified current at TL = 150 °C  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
IFSM  
50  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 175  
°C  
Revision: 27-Mar-12  
Document Number: 88890  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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