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ESH1CHM3_A/I PDF预览

ESH1CHM3_A/I

更新时间： 2024-11-05 09:29:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 95K
描述
Rectifier Diode,

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ESH1CHM3_A/I 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.6JESD-609代码：e3
湿度敏感等级：1峰值回流温度（摄氏度）：260
端子面层：Matte Tin (Sn)处于峰值回流温度下的最长时间：30
Base Number Matches：1

ESH1CHM3_A/I 数据手册

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ESH1B, ESH1C, ESH1D  
Vishay General Semiconductor  
www.vishay.com  
Surface-Mount Ultrafast Plastic Rectifier  
FEATURES  
Available  
• Low profile package  
• Ideal for automated placement  
• Glass passivated pellet chip junction  
• Ultrafast recovery times for high efficiency  
• Low forward voltage, low power loss  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
Available  
SMA (DO-214AC)  
Cathode Anode  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
LINKS TO ADDITIONAL RESOURCES  
3
D
3
D
3D Models  
TYPICAL APPLICATIONS  
For use in secondary rectification and freewheeling for  
ultrafast switching speeds AC/AC and DC/DC converters in  
high temperature conditions for both consumer and  
automotive applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
MECHANICAL DATA  
VRRM  
trr  
100 V, 150 V, 200 V  
25 ns  
Case: SMA (DO-214AC)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
VF at IF  
0.90 V  
TJ max.  
175 °C  
Package  
SMA (DO-214AC)  
Single  
Circuit configurations  
(“_X” denotes revision code e.g. A, B, .....)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
Polarity: color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
ESH1B  
EHB  
100  
ESH1C  
EHC  
150  
ESH1D  
EHD  
200  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
V
V
V
A
70  
105  
140  
Maximum DC blocking voltage  
Maximum average forward rectified current at TL = 150 °C  
100  
150  
200  
IF(AV)  
1.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC® method)  
IFSM  
50  
A
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +175  
°C  
Revision: 08-Apr-2020  
Document Number: 88890  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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