EMX1DXV6T1,
EMX1DXV6T5
Preferred Devices
Product Preview
Dual NPN General Purpose
Amplifier Transistor
http://onsemi.com
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-563 package which is
designed for low power surface mount applications, where board
space is at a premium.
DUAL NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
• Reduces Board Space
• High h , 210−460 (Typical)
FE
SURFACE MOUNT
• Low V , < 0.5 V
CE(sat)
• Available in 7 inch Tape and Reel
• Pb−free Solder Plating
(6)
(5)
(4)
MAXIMUM RATINGS (T = 25°C)
A
Tr
2
Rating
Symbol
Value
60
Unit
Vdc
Tr
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
1
(BR)CBO
(BR)CEO
(BR)EBO
V
V
50
Vdc
7.0
Vdc
(1)
(2)
(3)
Collector Current − Continuous
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
MARKING
DIAGRAM
6
6
(One Junction Heated)
Symbol
Max
Unit
1
Total Device Dissipation
P
D
3X D
SOT−563
CASE 463A
T = 25°C
357 (Note 1)
2.9 (Note 1)
mW
mW/°C
A
Derate above 25°C
1
Thermal Resistance −
Junction-to-Ambient
R
350 (Note 1)
°C/W
q
JA
3X = Specific Device Code
= Date Code
D
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
ORDERING INFORMATION
Total Device Dissipation
P
D
Device
Package
Shipping†
T = 25°C
500 (Note 1)
4.0 (Note 1)
mW
mW/°C
A
Derate above 25°C
EMX1DXV6T1
SOT−563
4 mm pitch
4000/Tape & Reel
Thermal Resistance −
Junction-to-Ambient
R
250 (Note 1)
°C/W
°C
q
JA
EMX1DXV6T5
SOT−563
2 mm pitch
8000/Tape & Reel
Junction and Storage
Temperature Range
T , T
J
−55 to +150
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1. FR−4 @ Minimum Pad
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
January, 2004 − Rev. P1
EMX1DXV6T1/D