Datasheet > EMX28

EMX28

更新时间： 2024-09-16 03:34:23

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
2页	56K
描述
Low frequency transistor, complex (2-elements) Bipolar Transistor

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EMX28 数据手册

EMX28

Transistors

Low frequency transistor,

complex (2-elements) Bipolar Transistor

EMX28

zStructure

zExternal dimensions (Unit : mm)

NPN Silicon Epitaxial Planar Transistor

EMT6

1.6

0.5

1.0

0.5 0.5

zFeatures

( )

1) Two 2SD2696 dies are incorpolated in the EMT6 package.

2) Collector saturation voltage is low.

V^{CE (sat)}: max. 300mA at IC = 100mA / IB = 2mA

(

)

( )

1pin mark

0.22

0.13

Each lead has same dimensions

Abbreviated symbol : X28

zApplications

General purpose small signal amplifier

zPackaging specifications

zInner circuit

Package

Taping

T2R

(6)

(5)

(4)

Type

Code

Basic ordering unit (pieces)

8000

EMX28

zAbsolute maximum ratings (Ta=25°C)

<Tr1, Tr2>

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Limits

Unit

(1)

(2)

(3)

400

Collector current

∗1

I_CP

800

mW / TOTAL

mW / ELEMENT

°C

150

∗2

Power dissipation

P_D

120

Junction temperature

150

Range of storage temperature

∗1 Pw=10ms, Single pulse

Tstg

−55 to +150

°C

∗2 Each terminal mounted on a recommended land.

zElectrical characteristics (Ta=25°C)

<Tr1, Tr2>

Parameter

Symbol Min. Typ. Max.

Conditions

Unit

Collector-emitter breakdown voltage BV_CEO

−

100

300

680

−

I_C=1mA

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

DC current gain

BV_CBO

BV_EBO

I_CBO

I_C=10µA

I_E=10µA

−

270

_CB= 30V

I_EBO

V_EB= 6V

V_{CE (sat)}

h_FE

120

mV I_C=100mA, I_B= 2mA

−

400

3.0

−

MHz

_CE=2V, I_C=100mA

Transition frequency

f_T

−

_CE=2V, I_E= −100mA, f=100MHz

_CB=10V, I_E= 0A, f=1MHz

Output capacitance

C_ob

−

1/1

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