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EMX1DXV6T5

更新时间： 2024-09-15 06:57:11
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器晶体管
页数 文件大小 规格书
4页 52K
描述
Dual NPN General Purpose Amplifier Transistor

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中文翻译

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EMX1DXV6T5 数据手册

 浏览型号EMX1DXV6T5的Datasheet PDF文件第2页浏览型号EMX1DXV6T5的Datasheet PDF文件第3页浏览型号EMX1DXV6T5的Datasheet PDF文件第4页 
EMX1DXV6T1,  
EMX1DXV6T5  
Preferred Devices  
Dual NPN General Purpose  
Amplifier Transistor  
This NPN transistor is designed for general purpose amplifier  
applications. This device is housed in the SOT-563 package which is  
designed for low power surface mount applications, where board  
space is at a premium.  
http://onsemi.com  
DUAL NPN GENERAL  
PURPOSE AMPLIFIER  
TRANSISTORS  
Features  
• Reduces Board Space  
• High h , 210−460 (Typical)  
FE  
SURFACE MOUNT  
• Low V  
, < 0.5 V  
CE(sat)  
• These are Pb−Free Devices  
(6)  
(5)  
(4)  
MAXIMUM RATINGS (T = 25°C)  
A
Tr  
2
Rating  
Symbol  
Value  
Unit  
Collector-Base Voltage  
V
60  
Vdc  
(BR)CBO  
(BR)CEO  
(BR)EBO  
Tr  
1
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
50  
7.0  
100  
Vdc  
Vdc  
(1)  
(2)  
(3)  
Collector Current − Continuous  
I
mAdc  
C
THERMAL CHARACTERISTICS  
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
6
Total Device Dissipation  
P
D
1
T = 25°C  
357 (Note 1)  
2.9 (Note 1)  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance −  
Junction-to-Ambient  
R
q
JA  
350 (Note 1)  
°C/W  
SOT−563  
CASE 463A  
STYLE 1  
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
D
T = 25°C  
Derate above 25°C  
500 (Note 1)  
4.0 (Note 1)  
mW  
mW/°C  
A
MARKING DIAGRAM  
Thermal Resistance −  
Junction-to-Ambient  
R
250 (Note 1)  
°C/W  
q
JA  
3X M G  
Junction and Storage  
Temperature Range  
T , T  
J stg  
−55 to +150  
°C  
G
1
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
3X = Specific Device Code  
M
= Month Code  
1. FR−4 @ Minimum Pad  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
November, 2005 − Rev. 1  
EMX1DXV6T1/D  
 
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EMX1DXV6T5 替代型号

型号 品牌 替代类型 描述 数据表
EMX1DXV6T5G ONSEMI

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 Dual NPN General Purpose Amplifier Transistor

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