Datasheet > EMX26

EMX26

更新时间： 2024-11-05 23:14:47

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	84K
描述
General purpose transistors (dual transistors)

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EMX26 数据手册

EMX26

Transistors

General purpose transistors

(dual transistors)

EMX26

zExternal dimensions (Unit : mm)

zFeatures

1) Two 2SD2654 chips in a EMT package.

2) Mounting possible with EMT3 automatic mounting

machines.

3) Transistor elements are independent, eliminating

interference.

EMX26

( )

1.2

1.6

4) Mounting cost and area can be cut in half.

Each lead has same dimensions

ROHM : EMT6

Abbreviated symbol : X26

zStructure

Epitaxial planar type

NPN silicon transistor

The following characteristics apply to both Tr1 and Tr2.

zEquivalent circuit

EMX26

(3) (2) (1)

Tr2

(4) (5) (6)

zAbsolute maximum ratings (Ta=25°C)

Limits

Parameter

Symbol

Unit

VCBO

VCEO

VEBO

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

0.15

A (DC)

A (Pulse)

Collector current

0.2

∗1

∗2

150 (TOTAL)

Power dissipation

Junction temperature

150

°C

Storage temperature

Tstg

−55 to +150

∗1 Single pulse Pw=100ms.

∗2 120mW per element must not be exceeded.

1/3

12 3 4

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