5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 小信号双极晶体管> EMX1DXV6T1G
EMX1DXV6T1G PDF预览

EMX1DXV6T1G

更新时间： 2024-11-05 06:57:11
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管光电二极管
页数 文件大小 规格书
4页 52K
描述
Dual NPN General Purpose Amplifier Transistor

阅读下载

中文翻译

获取价格

EMX1DXV6T1G 技术参数

是否无铅：不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：1 week风险等级：0.91
Is Samacsys：N最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：120JESD-30 代码：R-PDSO-F6
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：180 MHzBase Number Matches：1

EMX1DXV6T1G 数据手册

 浏览型号EMX1DXV6T1G的Datasheet PDF文件第2页浏览型号EMX1DXV6T1G的Datasheet PDF文件第3页浏览型号EMX1DXV6T1G的Datasheet PDF文件第4页 
EMX1DXV6T1,  
EMX1DXV6T5  
Preferred Devices  
Dual NPN General Purpose  
Amplifier Transistor  
This NPN transistor is designed for general purpose amplifier  
applications. This device is housed in the SOT-563 package which is  
designed for low power surface mount applications, where board  
space is at a premium.  
http://onsemi.com  
DUAL NPN GENERAL  
PURPOSE AMPLIFIER  
TRANSISTORS  
Features  
• Reduces Board Space  
• High h , 210−460 (Typical)  
FE  
SURFACE MOUNT  
• Low V  
, < 0.5 V  
CE(sat)  
• These are Pb−Free Devices  
(6)  
(5)  
(4)  
MAXIMUM RATINGS (T = 25°C)  
A
Tr  
2
Rating  
Symbol  
Value  
Unit  
Collector-Base Voltage  
V
60  
Vdc  
(BR)CBO  
(BR)CEO  
(BR)EBO  
Tr  
1
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
50  
7.0  
100  
Vdc  
Vdc  
(1)  
(2)  
(3)  
Collector Current − Continuous  
I
mAdc  
C
THERMAL CHARACTERISTICS  
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
6
Total Device Dissipation  
P
D
1
T = 25°C  
357 (Note 1)  
2.9 (Note 1)  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance −  
Junction-to-Ambient  
R
q
JA  
350 (Note 1)  
°C/W  
SOT−563  
CASE 463A  
STYLE 1  
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
D
T = 25°C  
Derate above 25°C  
500 (Note 1)  
4.0 (Note 1)  
mW  
mW/°C  
A
MARKING DIAGRAM  
Thermal Resistance −  
Junction-to-Ambient  
R
250 (Note 1)  
°C/W  
q
JA  
3X M G  
Junction and Storage  
Temperature Range  
T , T  
J stg  
−55 to +150  
°C  
G
1
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
3X = Specific Device Code  
M
= Month Code  
1. FR−4 @ Minimum Pad  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
November, 2005 − Rev. 1  
EMX1DXV6T1/D  
 
1234

中文翻译

下载PDF

EMX1DXV6T1G 替代型号

型号 品牌 替代类型 描述 数据表
EMX1DXV6T1 ONSEMI

完全替代

 Dual NPN General Purpose Amplifier Transistor
EMX2DXV6T5G ONSEMI

类似代替

 Dual NPN General Purpose Amplifier Transistor
EMX1DXV6T5G ONSEMI

类似代替

 Dual NPN General Purpose Amplifier Transistor

与EMX1DXV6T1G相关器件

型号 品牌 获取价格 描述 数据表
EMX1DXV6T5 ONSEMI

获取价格

 		Dual NPN General Purpose Amplifier Transistor
EMX1DXV6T5G ONSEMI

获取价格

 		Dual NPN General Purpose Amplifier Transistor
EMX1FHAT2R ROHM

获取价格

 		Small Signal Bipolar Transistor,
EMX1T2R ROHM

获取价格

 		Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, EMT6,
EMX2 ROHM

获取价格

 		General purpose (dual transistors)
EMX2_1 ROHM

获取价格

 		General purpose (dual transistors)
EMX26 ROHM

获取价格

 		General purpose transistors (dual transistors)
EMX28 ROHM

获取价格

 		Low frequency transistor, complex (2-elements) Bipolar Transistor
EMX28_09 ROHM

获取价格

 		Complex (2-elements) Bipolar Transistor
EMX28T2R ROHM

获取价格

 		Small Signal Bipolar Transistor, 0.4A I(C), 30V V(BR)CEO, 2-Element, NPN, Silicon, EMT6, 6

与EMX1DXV6T1G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证